欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: UMX3N
廠商: Rohm CO.,LTD.
英文描述: General purpose (dual transistors)
中文描述: 通用(雙晶體管)
文件頁數: 1/3頁
文件大小: 68K
代理商: UMX3N
EMX2 / EMX3 / UMX2N / UMX3N
/
IMX2 / IMX3
Transistors
General purpose (dual transistors)
EMX2 / EMX3 / UMX2N / UMX3N / IMX2 / IMX3
!
Features
1) Two 2SC2412AK chips in a EMT or UMT or SMT package.
!
Equivalent circuits
(1)
(2)
(3)
(4) (5)
(6)
(6)
(5)
(4)
(3) (2)
(1)
(1)
(2)
(3)
(4)
(5)
(6)
(6)
(5)
(4)
(3)
(2)
(1)
EMX2 / UMX2N
IMX2
EMX3 / UMX3N
IMX3
!
Absolute maximum ratings
(Ta=25
°
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
60
50
7
150
300(TOTAL)
150
55
~
+
150
150(TOTAL)
EMX2 / EMX3 / UMX2N / UMX3N
IMX2 / IMX3
Unit
V
V
V
mA
mW
°
C
°
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
1
2
!
Electrical characteristics
(Ta=25
°
C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
60
50
7
120
Typ.
180
2
Max.
0.1
0.1
0.4
560
3.5
Unit
V
V
V
μ
A
μ
A
V
MHz
pF
Conditions
Transition frequency
Output capacitance
I
C
=
50
μ
A
I
C
=
1mA
I
E
=
50
μ
A
V
CB
=
60V
V
EB
=
7V
I
C
/I
B
=
50mA/5mA
V
CE
=
6V, I
C
=
1mA
V
CE
=
12V, I
E
=
2mA, f
=
100MHz
V
CB
=
12V, I
E
=
0mA, f
=
1kHz
Transition frequency of the device.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
!
Package, marking, and packaging specifications
Type
Package
Marking
Code
EMX2
EMT6
X2
T2R
8000
EMX3
EMT6
X3
T2R
8000
UMX2N
UMT6
X2
TR
3000
UMX3N
UMT6
X3
TR
3000
IMX2
SMT6
X2
T108
3000
IMX3
SMT6
X3
T108
3000
Basic ordering unit (pieces)
相關PDF資料
PDF描述
UMX4N High transition frequency (dual transistors)
UMW6N High transition frequency (dual transistors)
UMX5N High transition frequency (dual transistors)
UMY1N Emitter common (dual transistors)
UMZ12N Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode
相關代理商/技術參數
參數描述
UMX3NTR 功能描述:兩極晶體管 - BJT DUAL NPN 50V 150MA SOT-363 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
UMX4 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | NPN | 18V V(BR)CEO | 50MA I(C) | SO
UMX4220 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Consumer IC
UMX-435-B14 制造商:Universal Microwave Corporation 功能描述:VCO
UMX4N 制造商:ROHM 制造商全稱:Rohm 功能描述:High transition frequency (dual transistors)
主站蜘蛛池模板: 垦利县| 石嘴山市| 隆回县| 赤城县| 波密县| 墨竹工卡县| 马公市| 铁力市| 玛纳斯县| 长白| 天全县| 遂溪县| 阳曲县| 清镇市| 邵武市| 新河县| 郯城县| 青龙| 永济市| 礼泉县| 万荣县| 吉林省| 灵川县| 新源县| 阿拉善右旗| 广汉市| 洛浦县| 丹凤县| 家居| 万全县| 武威市| 财经| 台北市| 青海省| 兴义市| 休宁县| 五寨县| 周至县| 山东省| 鱼台县| 巨鹿县|