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參數(shù)資料
| 型號： | UN121D |
| 英文描述： | Composite Device - Transistors with built-in Resistor |
| 中文描述： | 復(fù)合裝置-內(nèi)置晶體管，電阻， |
| 文件頁數(shù)： | 1/14頁 |
| 文件大小： | 454K |
| 代理商： | UN121D |
1
: 2003
10
SJH00003BJD
UNR121x
(UN121x
)
NPN
■
M
,
,
, P
■
(R
1
)
47 k
10 k
22 k
47 k
10 k
10 k
4.7 k
22 k
0.51 k
1 k
47 k
47 k
4.7 k
10 k
4.7 k
(R
2
)
10 k
22 k
47 k
47 k
5.1 k
10 k
10 k
22 k
10 k
4.7 k
4.7 k
UNR1210 (UN1210)
UNR1211 (UN1211)
UNR1212 (UN1212)
UNR1213 (UN1213)
UNR1214 (UN1214)
UNR1215 (UN1215)
UNR1216 (UN1216)
UNR1217 (UN1217)
UNR1218 (UN1218)
UNR1219 (UN1219)
UNR121D (UN121D)
UNR121E (UN121E)
UNR121F (UN121F)
UNR121K (UN121K)
UNR121L (UN121L)
■
T
a
=
25
°
C
)
( )
,
Unit : mm
2.5
±
0.1
(1.0)
(
1 : Base
2 : Collector
3 : Emitter
M-A1 Package
6.9
±
0.1
(1.5)
(0.85)
0.55
±
0.1
0.45
±
0.05
(2.5)
(2.5)
2
1
3
R 0.7
R 0.9
(
3
±
0
4
±
0
4
±
0
2
±
0
1
±
0
2
±
0
1
±
0
(1.5)
(E
)
V
CBO
50
V
(B
)
V
CEO
I
C
50
V
100
mA
P
T
400
mW
T
j
T
stg
150
°
C
°
C
55
～
+
150
B
R
1
R
2
C
E
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UNR121E | Composite Device - Transistors with built-in Resistor |
| UN121E | Composite Device - Transistors with built-in Resistor |
| UNR121F | Composite Device - Transistors with built-in Resistor |
| UN121F | Composite Device - Transistors with built-in Resistor |
| UNR121K | Composite Device - Transistors with built-in Resistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UN121E | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type |
| UN121F | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type |
| UN121K | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer transistor |
| UN121L | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type |
| UN1221 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer transistor |
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