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參數資料
| 型號： | UNR2114 |
| 英文描述： | Composite Device - Transistors with built-in Resistor |
| 中文描述： | 復合裝置-內置晶體管，電阻， |
| 文件頁數： | 1/18頁 |
| 文件大?。?/td> | 283K |
| 代理商： | UNR2114 |
1
Transistors with built-in Resistor
UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
(UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z)
Silicon PNP epitaxial planer transistor
For digital circuits
I
Features
G
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
G
Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.
I
Resistance by Part Number
Marking Symbol
G
UNR2111
6A
G
UNR2112
6B
G
UNR2113
6C
G
UNR2114
6D
G
UNR2115
6E
G
UNR2116
6F
4.7k
G
UNR2117
6H
G
UNR2118
6I
0.51k
G
UNR2119
6K
G
UNR2110
6L
G
UNR211D
6M
G
UNR211E
6N
G
UNR211F
6O
4.7k
G
UNR211H
6P
2.2k
G
UNR211L
6Q
4.7k
G
UNR211M
EI
2.2k
G
UNR211N
EW
4.7k
G
UNR211T
EY
G
UNR211V
FC
2.2k
G
UNR211Z
FE
4.7k
I
Absolute Maximum Ratings
(Ta=25C)
Parameter
Symbol
(R
1
)
10k
22k
47k
10k
10k
(R
2
)
10k
22k
47k
47k
—
—
—
5.1k
10k
—
10k
22k
10k
10k
4.7k
47k
47k
47k
2.2k
22k
22k
1k
47k
47k
47k
22k
1:Base
2:Emitter
3:Collector
EIAJ:SC-59
Mini Type Package
Unit: mm
Internal Connection
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
–50
V
Collector to emitter voltage
–50
V
Collector current
–100
mA
Total power dissipation
200
mW
Junction temperature
150
C
Storage temperature
–55 to +150
C
2.8
+0.2
–0.3
1.5
+0.25
–0.05
0.65
±
0.15
0.65
±
0.15
3
1
2
0
0
1
±
0
0
+
–
1
+
–
0
0.4
±
0.2
0
0
+
–
1
0.1 to 0.3
2
+
–
B
C
R1
R2
E
Note) The part number
s
in the parenthesis show conventional part number.
相關PDF資料 |
PDF描述 |
|---|---|
| UN2114 | Composite Device - Transistors with built-in Resistor |
| UNR2115 | Composite Device - Transistors with built-in Resistor |
| UN2115 | Composite Device - Transistors with built-in Resistor |
| UN211V | Composite Device - Transistors with built-in Resistor |
| UNR211Z | Composite Device - Transistors with built-in Resistor |
相關代理商/技術參數 |
參數描述 |
|---|---|
| UNR2114(UN2114) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Composite Device - Transistors with built-in Resistor |
| UNR211400L | 功能描述:TRANS PNP W/RES 80 HFE MINI 3P RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路﹐預偏壓式 系列:- 標準包裝:10,000 系列:- 晶體管類型:NPN - 預偏壓 電流 - 集電極 (Ic)（最大）:100mA 電壓 - 集電極發射極擊穿（最大）:50V 電阻器 - 基極 (R1)（歐）:47k 電阻器 - 發射極 (R2)（歐）:47k 在某 Ic、Vce 時的最小直流電流增益 (hFE):70 @ 5mA，5V Ib、Ic條件下的Vce飽和度（最大）:300mV @ 500µA，10mA 電流 - 集電極截止（最大）:- 頻率 - 轉換:100MHz 功率 - 最大:250mW 安裝類型:表面貼裝 封裝/外殼:SC-70，SOT-323 供應商設備封裝:PG-SOT323-3 包裝:帶卷 (TR) 其它名稱:SP000756242 |
| UNR2115 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type |
| UNR2115(UN2115) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Composite Device - Transistors with built-in Resistor |
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