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參數資料
| 型號： | UNR411D |
| 英文描述： | Composite Device - Transistors with built-in Resistor |
| 中文描述： | 復合裝置-內置晶體管，電阻， |
| 文件頁數： | 1/15頁 |
| 文件大小： | 376K |
| 代理商： | UNR411D |
Transistors with built-in Resistor
UNR41XX Series
(UN41XX Series)
Silicon PNP epitaxial planar transistor
1
Publication date: July 2002
SJH00018CED
For digital circuits
■
Features
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
New S type package, allowing supply with the radial taping
■
Resistance by Part Number
(R
1
)
47 k
10 k
22 k
47 k
10 k
10 k
4.7 k
22 k
0.51 k
1 k
47 k
47 k
4.7 k
2.2 k
4.7 k
2.2 k
4.7 k
(R
2
)
10 k
22 k
47 k
47 k
5.1 k
10 k
10 k
22 k
10 k
10 k
4.7 k
47 k
47 k
UNR4110 (UN4110)
UNR4111 (UN4111)
UNR4112 (UN4112)
UNR4113 (UN4113)
UNR4114 (UN4114)
UNR4115 (UN4115)
UNR4116 (UN4116)
UNR4117 (UN4117)
UNR4118 (UN4118)
UNR4119 (UN4119)
UNR411D (UN411D)
UNR411E (UN411E)
UNR411F (UN411F)
UNR411H (UN411H)
UNR411L (UN411L)
UNR411M
UNR411N
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
50
50
100
V
Collector to emitter voltage
V
CEO
V
Collector current
I
C
P
T
mA
Total power dissipation
300
mW
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
B
R
1
R
2
C
E
Internal Connection
Unit: mm
1: Emitter
2: Collector
3: Base
NS-B1 Package
4.0
±
0.2
0.75 max.
2.0
±
0.2
0.45
(2.5) (2.5)
0.7
±
0.1
2
3
1
+0.20
0.45
+0.20
7
3
±
0
(
(
1
±
0
Note) The part numbers in the parenthesis show conventional part number.
相關PDF資料 |
PDF描述 |
|---|---|
| UN411D | Composite Device - Transistors with built-in Resistor |
| UNR411E | Composite Device - Transistors with built-in Resistor |
| UN411E | Composite Device - Transistors with built-in Resistor |
| UNR411F | Composite Device - Transistors with built-in Resistor |
| UN411F | Composite Device - Transistors with built-in Resistor |
相關代理商/技術參數 |
參數描述 |
|---|---|
| UNR411D(UN411D) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Composite Device - Transistors with built-in Resistor |
| UNR411E | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type |
| UNR411E(UN411E) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス － 抵抗內蔵型トランジスタ |
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