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參數資料
型號: UNR412X
英文描述: Composite Device - Transistors with built-in Resistor
中文描述: 復合裝置-內置晶體管,電阻,
文件頁數: 1/15頁
文件大小: 376K
代理商: UNR412X
Transistors with built-in Resistor
UNR41XX Series
(UN41XX Series)
Silicon PNP epitaxial planar transistor
1
Publication date: July 2002
SJH00018CED
For digital circuits
Features
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
New S type package, allowing supply with the radial taping
Resistance by Part Number
(R
1
)
47 k
10 k
22 k
47 k
10 k
10 k
4.7 k
22 k
0.51 k
1 k
47 k
47 k
4.7 k
2.2 k
4.7 k
2.2 k
4.7 k
(R
2
)
10 k
22 k
47 k
47 k
5.1 k
10 k
10 k
22 k
10 k
10 k
4.7 k
47 k
47 k
UNR4110 (UN4110)
UNR4111 (UN4111)
UNR4112 (UN4112)
UNR4113 (UN4113)
UNR4114 (UN4114)
UNR4115 (UN4115)
UNR4116 (UN4116)
UNR4117 (UN4117)
UNR4118 (UN4118)
UNR4119 (UN4119)
UNR411D (UN411D)
UNR411E (UN411E)
UNR411F (UN411F)
UNR411H (UN411H)
UNR411L (UN411L)
UNR411M
UNR411N
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
50
50
100
V
Collector to emitter voltage
V
CEO
V
Collector current
I
C
P
T
mA
Total power dissipation
300
mW
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
B
R
1
R
2
C
E
Internal Connection
Unit: mm
1: Emitter
2: Collector
3: Base
NS-B1 Package
4.0
±
0.2
0.75 max.
2.0
±
0.2
0.45
(2.5) (2.5)
0.7
±
0.1
2
3
1
+0.20
0.45
+0.20
7
3
±
0
(
(
1
±
0
Note) The part numbers in the parenthesis show conventional part number.
相關PDF資料
PDF描述
UN412X Composite Device - Transistors with built-in Resistor
UNR412Y Composite Device - Transistors with built-in Resistor
UN412Y Composite Device - Transistors with built-in Resistor
UNR4110(UN4110) Composite Device - Transistors with built-in Resistor
UNR4111(UN4111) 複合デバイス - 抵抗內蔵型トランジスタ
相關代理商/技術參數
參數描述
UNR412X(UN412X) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス - 抵抗內蔵型トランジスタ
UNR412Y 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:UNR412x Series (UN412x Series) Silicon PNP epitaxial planar type
UNR412Y(UN412Y) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス - 抵抗內蔵型トランジスタ
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