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參數(shù)資料
| 型號(hào)： | UNR5115Q |
| 英文描述： | TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-70 |
| 中文描述： | 晶體管| 50V五（巴西）總裁| 100mA的一（c）|的SC - 70 |
| 文件頁(yè)數(shù)： | 1/18頁(yè) |
| 文件大小： | 293K |
| 代理商： | UNR5115Q |
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1
Transistors with built-in Resistor
UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
(UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/511D/511E/511F/
511H/511L/511M/511N/511T/511V/511Z)
Silicon PNP epitaxial planer transistor
For digital circuits
I Features
G Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
G S-Mini type package, allowing automatic insertion through tape
packing and magazine packing.
I Resistance by Part Number
Marking Symbol
(R1)(R2)
G UNR5111
6A
10k
10k
G UNR5112
6B
22k
22k
G UNR5113
6C
47k
47k
G UNR5114
6D
10k
47k
G UNR5115
6E
10k
—
G UNR5116
6F
4.7k
—
G UNR5117
6H
22k
—
G UNR5118
6I
0.51
5.1k
G UNR5119
6K
1k
10k
G UNR5110
6L
47k
—
G UNR511D
6M
47k
10k
G UNR511E
6N
47k
22k
G UNR511F
6O
4.7k
10k
G UNR511H
6P
2.2k
10k
G UNR511L
6Q
4.7k
4.7k
G UNR511M
EI
2.2k
47k
G UNR511N
EW
4.7k
47k
G UNR511T
EY
22k
47k
G UNR511V
FC
2.2k
2.2k
G UNR511Z
FE
4.7k
22k
I Absolute Maximum Ratings (Ta=25C)
1 : Base
2 : Emitter
EIAJ : SC–70
3 : Collector
S–Mini Type Package
Unit: mm
Internal Connection
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–50
V
Collector to emitter voltage
VCEO
–50
V
Collector current
IC
–100
mA
Total power dissipation
PT
150
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
–55 to +150
C
2.1
±0.1
1.3
±
0.1
0.9
±
0.1
0.7
±0.1
0.3
+0.1 -0
0.15
+0.1 -0.05
2.0
±
0.2
1.25
±0.1
0.425
1
3
2
0.65
0.2
0.65
0
to
0.1 0.2
±0.1
B
C
R1
R2
E
Note.) The Part numbers in the Parenthesis show conventional part number.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UNR5115R | TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-70 |
| UNR5115S | TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-70 |
| UNR5213(UN5213) | Composite Device - Transistors with built-in Resistor |
| UNR5214(UN5214) | 複合デバイス － 抵抗內(nèi)蔵型トランジスタ |
| UNR5215(UN5215) | Composite Device - Transistors with built-in Resistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UNR5115R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-70 |
| UNR5115S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-70 |
| UNR5116 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type |
| UNR5116(UN5116) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Composite Device - Transistors with built-in Resistor |
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