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參數資料
| 型號： | UNRF2A5 |
| 英文描述： | Composite Device - Transistors with built-in Resistor |
| 中文描述： | 復合裝置-內置晶體管，電阻， |
| 文件頁數： | 1/3頁 |
| 文件大小： | 81K |
| 代理商： | UNRF2A5 |
1
Publication date: December 2002
SJH00072AED
Transistors with built-in Resistor
UNRF2A5
Silicon NPN epitaxial planar transistor
For digital circuits
■
Features
Suitable for high-density mounting and downsizing of the equip-
ment for Ultraminiature leadless package
0.6 mm
×
1.0 mm (height 0.39 mm)
■
Absolute Maximum Ratings
T
a
=
25
°
C
Unit: mm
Internal Connection
Marking Symbol: 1X
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
V
CEO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
CE
=
10 V, I
C
=
5 mA
I
C
=
10 mA, I
B
=
0.3 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
2.5 V, R
L
=
1 k
50
V
Collector-emitter voltage (Base open)
50
V
Collector-base cutoff current (Emitter open)
I
CBO
0.1
μ
A
μ
A
Collector-emitter cutoff current (Base open)
I
CEO
I
EBO
0.5
Emitter-base cutoff current (Collector open)
0.01
mA
Forward current transfer ratio
h
FE
160
460
Collector-emitter saturation voltage
V
CE(sat)
V
OH
0.25
V
Output voltage high level
4.9
V
Output voltage low level
V
OL
0.2
V
Input resistance
R
1
f
T
30%
10
+
30%
k
Transition frequency
V
CB
=
10 V, I
E
=
2 mA, f
=
200 MHz
150
MHz
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
0
±
1
1.00
±0.05
2
3
0.39
+0.03
0.25
±0.05
0.25
±0.05
0
±
0.65
±0.01
0
±
1
2
0
±
0.05
±0.03
0
±
3
B
R
1
(10 k
)
E
C
1: Base
2: Emitter
3: Collector
ML3-N2 Package
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
50
V
Collector-emitter voltage (Base open)
V
CEO
50
V
Collector current
I
C
P
T
80
mA
Total power dissipation
100
mW
Junction temperature
T
j
125
°
C
°
C
Storage temperature
T
stg
55 to
+
125
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| UNRF2A6 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN Epitaxial Planar Transistor For Digital Circuits |
| UNRF2A7 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar transistor |
| UNRF2A700A | 功能描述:TRANS NPN W/RES 160 HFE ML3-N2 RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路﹐預偏壓式 系列:- 標準包裝:10,000 系列:- 晶體管類型:NPN - 預偏壓 電流 - 集電極 (Ic)（最大）:100mA 電壓 - 集電極發射極擊穿（最大）:50V 電阻器 - 基極 (R1)（歐）:47k 電阻器 - 發射極 (R2)（歐）:47k 在某 Ic、Vce 時的最小直流電流增益 (hFE):70 @ 5mA，5V Ib、Ic條件下的Vce飽和度（最大）:300mV @ 500µA，10mA 電流 - 集電極截止（最大）:- 頻率 - 轉換:100MHz 功率 - 最大:250mW 安裝類型:表面貼裝 封裝/外殼:SC-70，SOT-323 供應商設備封裝:PG-SOT323-3 包裝:帶卷 (TR) 其它名稱:SP000756242 |
| UNRF2AL | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Transistors with built-in Resistor |
| UNRF2AM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Composite Device - Transistors with built-in Resistor |
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