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參數資料
| 型號： | UPA1458H |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE |
| 中文描述： | NPN硅晶體管陣列低功率高速開關使用工業用達林頓晶體管 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 51K |
| 代理商： | UPA1458H |
SILICON TRANSISTOR ARRAY
μ
PA1458
DESCRIPTION
The
μ
PA1458 is NPN silicon epitaxial Darlington
Power Transistor Array that built in Surge Absorber and
4 circuits designed for driving solenoid, relay, lamp and
so on.
FEATURES
Surge Absorber (C - B) built in.
Easy mount by 0.1 inch of terminal interval.
High h
FE
for Darlington Transistor.
ORDERING INFORMATION
Part Number
Package
Quality Grade
μ
PA1458H
10 Pin SIP
Standard
Please refer to "Quality grade on NEC Semiconductor Devices"
(Document number IEI-1209) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (T
a
= 25 C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Surge Sustaining Energy
Collector Current (DC)
Collector Current (pulse)
Collector Current
Base Current (DC)
Total Power Dissipation
Total Power Dissipation
J unction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
E
CEO(sus)
I
C(DC)
I
C(pulse)
*
I
CBS(DC)
I
B(DC)
P
T1
**
P
T2
***
T
j
T
stg
60
±
10
60
±
10
7
25
±
5
±
10
5
0.5
3.5
28
150
–55 to +150
V
V
V
mJ /unit
A/unit
A/unit
mA/unit
A/unit
W
W
C
C
*
PW
≤
300
μ
s, Duty Cycle
≤
10 %
**
4 Circuits, T
a
= 25 C
***
4 Circuits, T
c
= 25 C
Document No. IC-3523
(O. D. No. IC-6342)
Date Published September 1994 P
Printed in J apan
NPN SILICON POWER TRANSISTOR ARRAY
LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR)
INDUSTRIAL USE
PACKAGE DIMENSION
(in millimeters)
1 2 3 4 5 6 7 8 910
1
26.8 MAX.
1.4
0.6 ±0.1
2.54
2
4.0
1
1.4
0.5 ±0.1
CONNECTION DIAGRAM
2
3
1
4
6
8
5
7
9
10
(C)
(E)
(B)
R
1
R
2
PIN No.
2, 4, 6, 8
3, 5, 7, 9
1, 10
: Base (B)
: Collector (C)
: Emitter (E)
R
1
= 3.0 k
R
2
= 300
The information in this document is subject to change without notice.
1994
DATA SHEET
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