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參數資料
| 型號： | UPA1716 |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 中文描述： | 開關P溝道功率MOS FET工業用 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 66K |
| 代理商： | UPA1716 |
1998, 1999
MOS FIELD EFFECT TRANSISTOR
μ
PA1716
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
Date Published
Printed in Japan
G13727EJ1V0DS00 (1st edition)
March 1999 NS CP(K)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and power management
applications of notebook computers.
FEATURES
Low on-resistance
R
DS(on)1
= 12.5 m
TYP. (V
GS
= –10 V, I
D
= –4 A)
R
DS(on)2
= 17.0 m
TYP. (V
GS
= –4.5 V, I
D
= –4 A)
R
DS(on)3
= 19.0 m
TYP. (V
GS
= –4.0 V, I
D
= –4 A)
Low C
iss
: C
iss
= 2100 pF TYP.
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA1716G
Power SOP8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
–30
#
#
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
20
V
Drain Current (DC)
Drain Current (pulse)
Note1
Total Power Dissipation (T
A
= 25°C)
Note2
I
D(DC)
8
#
A
I
D(pulse)
32
A
P
T
2.0
W
Channel Temperature
T
ch
150
°C
Storage Temperature
T
stg
–55 to +150
°C
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1 %
2.
Mounted on ceramic substrate of 1200 mm
2
x 1.0 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
EQUIVARENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
PACKAGE DRAWING (Unit : mm)
1.27
0.12 M
6.0 ±0.3
4.4
0.40
+0.10
0.78 Max.
0
1
1
0.8
0.5 ±0.2
0
+
–
5.37 Max.
0.10
1
4
8
5
1,2,3
4
5,6,7,8
; Source
; Gate
; Drain
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相關代理商/技術參數 |
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|---|---|
| UPA1716G | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
| UPA1717 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
| UPA1717G | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| UPA1717G-E1-A | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 30V 6A 8-Pin Power SOP T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,30V,6A,26m ohm,Power SOP8 |
| UPA1720 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
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