- 您現在的位置：買賣IC網 > PDF目錄384037 > UPA1723 (NEC Corp.) Switching N-channel power MOS FET industrial use PDF資料下載
參數資料
| 型號： | UPA1723 |
| 廠商： | NEC Corp. |
| 元件分類： | 功率晶體管 |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開關功率場效應晶體管 工業級 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 64K |
| 代理商： | UPA1723 |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1998, 1999
MOS FIELD EFFECT TRANSISTOR
μ
PA1723
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
Date Published
Printed in Japan
G14026EJ1V0DS00 (1st edition)
December 1999 NS CP(K)
The mark
#
shows major revised points.
DESCRIPTION
The
μ
PA1723 is N-Channel MOS Field Effect Transistor
designed for power management switch.
PACKAGE DRAWING (Unit : mm)
FEATURES
Low on-state resistance
R
DS(on)1
= 6.7 m
MAX. (V
GS
= 4.5 V, I
D
= 7.0 A)
R
DS(on)2
= 7.4 m
MAX. (V
GS
= 4.0 V, I
D
= 7.0 A)
R
DS(on)3
= 8.7 m
MAX. (V
GS
= 2.5 V, I
D
= 7.0 A)
Low C
iss
: C
iss
= 3800 pF TYP.
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA1723G
Power SOP8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
20
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
±12
V
Drain Current (DC)
Drain Current (pulse)
Note1
Total Power Dissipation (T
A
= 25°C)
Note2
I
D(DC)
±13
A
I
D(pulse)
±52
A
P
T
2.0
W
Channel Temperature
T
ch
150
°C
Storage Temperature
T
stg
–55 to + 150
°C
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1 %
2.
Mounted on ceramic substrate of 1200 mm
2
x 2.2mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
1.27
0.12 M
6.0 ±0.3
4.4
0.40
+0.10
0.78 MAX.
0
1
1
0.8
0.5 ±0.2
0
+
–
5.37 MAX.
0.10
1
4
8
5
1,2,3
4
5,6,7,8
; Source
; Gate
; Drain
相關PDF資料 |
PDF描述 |
|---|---|
| UPA1723G | Switching N-channel power MOS FET industrial use |
| UPA1724 | Switching N-channel power MOS FET industrial use |
| UPA1724G | Switching N-channel power MOS FET industrial use |
| UPA1725 | Switching N-channel power MOS FET industrial use |
| UPA1725G | Switching N-channel power MOS FET industrial use |
相關代理商/技術參數 |
參數描述 |
|---|---|
| UPA1723G | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| UPA1724 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| UPA1724G | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| UPA1724G-E2-A | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 20V 10A 8-Pin Power SOP T/R Cut Tape |
| UPA1725 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
發布緊急采購，3分鐘左右您將得到回復。