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參數資料
| 型號： | UPA1728G |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 9A I(D) | SO |
| 中文描述： | 晶體管| MOSFET的| N溝道| 60V的五（巴西）直| 9A條（丁）|蘇 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 68K |
| 代理商： | UPA1728G |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1999, 2000, 2001
MOS FIELD EFFECT TRANSISTOR
μ
PA1727
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No.
Date Published
Printed in Japan
G14330EJ3V0DS00 (3rd edition)
March 2002 NS CP(K)
The mark
#
shows major revised points.
DESCRIPTION
The
μ
PA1727 is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Single chip type
Low on-state resistance
R
DS(on)1
= 14 m
TYP. (V
GS
= 10 V, I
D
= 5.0 A)
R
DS(on)2
= 17 m
TYP. (V
GS
= 4.5 V, I
D
= 5.0 A)
R
DS(on)3
= 19 m
TYP. (V
GS
= 4.0 V, I
D
= 5.0 A)
Low C
iss
: C
iss
= 2400 pF TYP.
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA1727G
Power SOP8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
60
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
±20
V
Drain Current (DC)
Drain Current (Pulse)
Note1
Total Power Dissipation (T
A
= 25°C)
Note2
I
D(DC)
±10
A
I
D(pulse)
±40
A
P
T
2.0
W
Channel Temperature
T
ch
150
°C
Storage Temperature
Single Avalanche Current
Note3
Single Avalanche Energy
Note3
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Mounted on ceramic substrate of 1200 mm
2
x 2.2 mm
3.
Starting T
ch
= 25°C, V
DD
= 30 V, R
G
= 25
,
V
GS
= 20
→
0 V
T
stg
–55 to + 150
°C
I
AS
10
A
E
AS
200
mJ
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
PACKAGE DRAWING (Unit: mm)
1.27
0.12 M
6.0 ±0.3
4.4
0.40
+0.10
0.78 Max.
0
1
1
0.8
0.5 ±0.2
0
+
–
5.37 Max.
0.10
1
4
8
5
1, 2, 3
4
5, 6, 7, 8
; Source
; Gate
; Drain
#
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| UPA1742 | UPA1742TP Data Sheet | Data Sheet[04/2003] |
| UPA1743 | UPA1743TP Data Sheet | Data Sheet[04/2003] |
| UPA1744 | UPA1744TP Data Sheet | Data Sheet[03/2003] |
相關代理商/技術參數 |
參數描述 |
|---|---|
| UPA1728G(0)-E1-AT | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA1728G-E1-A | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 60V 9A 8-Pin Power SOP T/R Cut Tape |
| UPA1728G-E2 | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA1730 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
| UPA1730G | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
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