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參數資料
| 型號： | UPA1774G |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING DUAL P-CHANNEL POWER MOSFET |
| 中文描述： | 切換雙P -溝道功率MOSFET |
| 文件頁數： | 1/8頁 |
| 文件大小： | 78K |
| 代理商： | UPA1774G |
2001
MOS FIELD EFFECT TRANSISTOR
μ
PA1774
SWITCHING
DUAL P-CHANNEL POWER MOS FET
DATA SHEET
Document No.
Date Published
Printed in Japan
G15380EJ2V0DS00 (2nd edition)
June 2002 NS CP(K)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The
μ
PA1774 is Dual P-channel MOS Field Effect
Transistor.
FEATURES
Dual chip type
Low on-state resistance
R
DS(on)1
= 250 m
MAX. (V
GS
= –10 V, I
D
= –2.0
A)
R
DS(on)2
= 300 m
MAX. (V
GS
= –4.5 V, I
D
= –2.0
A)
R
DS(on)3
= 330 m
MAX. (V
GS
= –4.0 V, I
D
= –2.0
A)
Low input capacitance
C
iss
= 420 pF TYP.
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
Drain Current (DC) (T
C
= 25°C)
I
D(DC)
Drain Current (pulse)
Note1
I
D(pulse)
Total Power Dissipation (1 unit)
Note2
P
T
Total Power Dissipation (2 unit)
Note2
P
T
Channel Temperature
T
ch
Storage Temperature
T
stg
Single Avalanche Current
Note3
I
AS
Single Avalanche Energy
Note3
E
AS
–60
m
20
m
2.8
m
18
0.6
0.8
150
V
V
A
A
W
W
°C
°C
A
mJ
–55 to 150
–2.8
0.78
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Mounted on Glass Epoxy Board of 1600
mm
2
x 1.6
mm. Drain pad size: 264
mm
2
x 35
μ
m, T
A
= 25°C
3.
Starting T
ch
= 25°C, V
DD
= –30 V, R
G
= 25
, V
GS
= –20
→
0 V
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA1774G
Power SOP8
PACKAGE DRAWING (Unit: mm)
1.27
0.12 M
6.0 ±0.3
4.4
0.40
+0.10
0.78 MAX.
0
1
1
0.8
0.5 ±0.2
0
+
–
5.37 MAX.
0.10
1
4
8
5
1
2
7, 8 : Drain 1
3
: Source 2
4
: Gate 2
5, 6 : Drain 2
: Source 1
EQUIVALENT CIRCUIT
(1/2 circuit)
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
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