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參數(shù)資料
| 型號： | UPA1817GR-9JG |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | P溝道MOS場效應(yīng)晶體管開關(guān) |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 74K |
| 代理商： | UPA1817GR-9JG |
2002
MOS FIELD EFFECT TRANSISTOR
μ
PA1817
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No. G16253EJ1V0DS00 (1st edition)
Date Published August 2002 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The
μ
PA1817 is a switching device which can be
driven directly by a 2.5 V power source.
This device features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power management of notebook
computers and so on.
FEATURES
2.5 V drive available
Low on-state resistance
R
DS(on)1
= 12 m
MAX. (V
GS
=
4.5 V, I
D
=
6.0 A)
R
DS(on)2
= 12.5 m
MAX. (V
GS
=
4.0 V, I
D
=
6.0 A)
R
DS(on)3
= 19.2 m
MAX. (V
GS
=
2.5 V, I
D
=
6.0 A)
Built-in G-S protection diode against ESD
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA1817GR-9JG
Power TSSOP8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
20
m
12
m
12
m
48
2.0
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
V
Drain Current (DC) (T
A
= 25°C)
Drain Current (pulse)
Note1
Total Power Dissipation
Note2
I
D(DC)
A
I
D(pulse)
A
P
T
W
Channel Temperature
T
ch
150
°C
Storage Temperature
T
stg
55 to +150
°C
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Mounted on ceramic substrate of 5000
mm
2
x 1.1
mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
1
4
8
5
6.4 ±0.2
4.4 ±0.1
1.0 ±0.2
0
±
0.1
1, 2, 3
4
5, 6, 7, 8:Drain
:Source
:Gate
0.8 MAX.
3.15 ±0.15
3.0 ±0.1
0.65
0.10 M
0.27
+0.03
0.25
0.5
0.6
+0.15
3
°
+5
°
–3
°
1.2 MAX.
1.0±0.05
0.1±0.05
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UPA1817 | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA2707GR-E1 | SWITCHING N-CHANNEL POWER MOSFET |
| UPA2707GR-E1-A | SWITCHING N-CHANNEL POWER MOSFET |
| UPA2707GR-E2 | SWITCHING N-CHANNEL POWER MOSFET |
| UPA2707GR-E2-A | SWITCHING N-CHANNEL POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA1817GR-9JG-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA1817GR-9JG-E1-A | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 20V 12A 8-Pin Power TSSOP T/R Cut Tape |
| UPA1817GR-9JG-E2 | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA1818 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1818GR-9JG | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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