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參數資料
| 型號： | UPA1852GR-9JG |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | N溝道MOS場效應晶體管開關 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 64K |
| 代理商： | UPA1852GR-9JG |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1997, 1999
MOS FIELD EFFECT TRANSISTOR
μ
PA1852
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No.
Date Published
Printed in Japan
D12803EJ1V0DS00 (1st edition)
October 1999 NS CP(K)
DESCRIPTION
The
μ
PA1852 is a switching device which can be
driven directly by a 2.5
-
V power source.
The
μ
PA1852 features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
FEATURES
Can be driven by a 2.5-V power source
Low on-state resistance
R
DS(on)1
= 40 m
MAX. (V
GS
= 4.5 V, I
D
= 3.0 A)
R
DS(on)2
= 45 m
MAX. (V
GS
= 4.0 V, I
D
= 3.0 A)
R
DS(on)3
= 60 m
MAX. (V
GS
= 2.5 V, I
D
= 3.0 A)
Built-in G-S protection diode against ESD
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA1852GR-9JG
Power TSSOP8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
V
DSS
20
V
Gate to Source Voltage
V
GSS
±
12
±
6.0
±
24
V
Drain Current (DC)
Drain Current (pulse)
Note1
Total Power Dissipation
Note2
I
D(DC)
A
I
D(pulse)
A
P
T
2.0
W
Channel Temperature
T
ch
150
°C
Storage Temperature
T
stg
–55 to +150
°C
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1 %
2.
Mounted on ceramic substrate of 5000
mm
2
x 1.1
mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit : mm)
1
4
8
5
6.4 ±0.2
4.4 ±0.1
1.0 ±0.2
0
±
0.1
0.8 MAX.
3.15 ±0.15
3.0 ±0.1
0.65
0.10 M
0.27
+0.03
0.25
0.5
0.6
+0.15
3
°
+5
°
–3
°
1.2 MAX.
1.0±0.05
0.1±0.05
1 :Drain1
2, 3 :Source1
4 :Gate1
5 :Gate2
6, 7 :Source2
8 :Drain2
EQUIVALENT CIRCUIT
Source1
Body
Diode
Gate
Protection
Diode
Gate1
Drain1
Source2
Body
Diode
Gate
Protection
Diode
Gate2
Drain2
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