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參數(shù)資料
| 型號(hào)： | UPA1910 |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | P溝道MOS場(chǎng)效應(yīng)晶體管開關(guān) |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 66K |
| 代理商： | UPA1910 |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1998, 1999
MOS FIELD EFFECT TRANSISTOR
μ
PA1910
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No.
Date Published
Printed in Japan
D13105EJ2V0DS00 (2nd edition)
November 1999 NS CP(K)
The mark
#
shows major revised points.
DESCRIPTION
The
μ
PA1910 is a switching device which can be driven
directly by a 2.5-V power source.
The
μ
PA1910 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
Can be driven by a 2.5-V power source
Low on-state resistance
R
DS(on)1
= 80 m
MAX. (V
GS
= –4.5
V, I
D
= –1.5
A)
R
DS(on)2
= 90 m
MAX. (V
GS
= –4.0
V, I
D
= –1.5
A)
R
DS(on)3
= 100 m
MAX. (V
GS
= –3.0
V, I
D
= –1.0 A)
R
DS(on)4
= 130 m
MAX. (V
GS
= –2.5
V, I
D
= –1.0 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA1910TE
6-pin Mini Mold (Thin Type)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
–12
–10/+5
±2.5
±10
0.2
2
150
–55 to +150
V
V
A
A
W
W
°C
°C
Total Power Dissipation
Total Power Dissipation
Note2
Channel Temperature
Storage Temperature
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1 %
2.
Mounted on FR-4 board, t
≤
5
sec.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit : mm)
0.65
0.9 to 1.1
0 to 0.1
0.16
+0.1
2
1
0.95
1
2
3
6
5
4
1.9
2.9 ±0.2
0.32
+0.1
0.95
0
+
–
1
, 2, 5, 6 : Drain
3
4
: Gate
: Source
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Marking: TB
Gate
Drain
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UPA1910TE | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1911A | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1911ATE | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1911 | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1911TE | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA1910TE | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1911 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1911A | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1911ATE | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1911ATE-T1 | 制造商:Renesas Electronics Corporation 功能描述: |
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