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參數(shù)資料
| 型號(hào)： | UPA2451C |
| 廠商： | NEC Corp. |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR |
| 中文描述： | MOS場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 179K |
| 代理商： | UPA2451C |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
μ
PA2451C
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No. G18793EJ1V0DS00 (1st edition)
Date Published July 2007 NS
Printed in Japan
2007
PACKAGE DRAWING (Unit: mm)
1
2
3
6
5
4
4.4±0.1
5.0±0.1
0
0
0
+
-
0
0
0
+
-
7
(0.9)
(0.15)
(
(2.2)
(0.5)
1
2
1,2:
3:
7:
Each lead has same dimensions.
Source 1
Gate 1
Drain
5,6:
4:
Source 2
Gate 2
DESCRIPTION
The
μ
PA2451C is a switching device, which can be driven directly
by a 2.5 V power source.
The
μ
PA2451C features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
FEATURES
2.5 V drive available
Low on-state resistance
R
DS(on)1
= 20.0 m
Ω
MAX. (V
GS
= 4.5 V, I
D
= 4.0 A)
R
DS(on)2
= 21.0 m
Ω
MAX. (V
GS
= 4.0 V, I
D
= 4.0 A)
R
DS(on)3
= 25.0 m
Ω
MAX. (V
GS
= 3.1 V, I
D
= 4.0 A)
R
DS(on)4
= 32.0 m
Ω
MAX. (V
GS
= 2.5 V, I
D
= 4.0 A)
Built-in G-S protection diode against ESD
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Note1
Drain Current (pulse)
Note2
Total Power Dissipation (2 units)
Note1
Total Power Dissipation (2 units)
Note3
Channel Temperature
Storage Temperature
Notes 1.
Mounted on ceramic board of 50 cm
2
x 1.1 mmt
2.
PW
≤
10
μ
s, Duty Cycle
≤
1%
3.
Mounted on FR-4 board of 50 cm
2
x 1.1 mmt
ORDERING INFORMATION
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
30.0
±
12.0
±
8.2
±
60.0
2.5
0.7
150
V
V
A
A
W
W
°
C
°
C
55 to
+
150
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
μ
PA2451CTL-E1-A
Note
μ
PA2451CTL-E2-A
Note
Note
Pb-free (This product does not contain Pb in the external electrode and other parts.)
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Sn-Bi
Reel
3000 p/reel
6PIN HWSON (4521)
EQUIVALENT CIRCUIT
Source2
Body
Diode
Gate
Protection
Diode
Gate2
Drain2
Source1
Body
Diode
Gate
Protection
Diode
Gate1
Drain1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| uPA2451CTL-E1-A | MOS FIELD EFFECT TRANSISTOR |
| uPA2451CTL-E2-A | MOS FIELD EFFECT TRANSISTOR |
| UPA2510TM | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA2510 | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA2650T1E | MOS FIELD EFFECT TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA2451CTL-E1-A | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA2451CTL-E2-A | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| UPA2451TL | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA2451TL-E1-A | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA2452 | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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