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參數資料
| 型號： | UPA2702TP |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING N-CHANNEL POWER MOSFET |
| 中文描述： | 開關N溝道功率MOSFET |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 61K |
| 代理商： | UPA2702TP |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
MOS FIELD EFFECT TRANSISTOR
μ
PA2702GR
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No.
Date Published
Printed in Japan
G15724EJ2V0DS00 (2nd edition)
May 2002 NS CP(K)
The mark
#
shows major revised points.
DESCRIPTION
The
μ
PA2702GR is N-Channel MOS Field Effect Transistor
designed for DC/DC converters and power management
applications of notebook computers.
FEATURES
Low on-state resistance
R
DS(on)1
= 9.5 m
MAX. (V
GS
= 10 V, I
D
= 7.0 A)
R
DS(on)2
= 15.1 m
MAX. (V
GS
= 4.5 V, I
D
= 7.0 A)
Low C
iss
: C
iss
= 900 pF TYP. (V
DS
= 10 V, V
GS
= 0 V)
Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA2702GR
Power SOP8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
30
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
±
20
±
13
±
52
2.0
V
Drain Current (DC)
Drain Current (pulse)
Note1
Total Power Dissipation (T
A
= 25°C)
Note2
I
D(DC)
A
I
D(pulse)
A
P
T
W
Channel Temperature
T
ch
150
°C
Storage Temperature
Single Avalanche Current
Note3
Single Avalanche Energy
Note3
T
stg
–55 to +150
°C
I
AS
13
A
E
AS
16.9
mJ
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Mounted on ceramic substrate of 1200 mm
2
x 2.2 mm
3.
Starting T
ch
= 25°C, V
DD
= 15 V, R
G
= 25
, L = 100
μ
H, V
GS
= 20
→
0 V
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is extemally required if a voltage exceeding the rated
voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
1.27
0.12 M
6.0 ±0.3
4.4
0.40
+0.10
0.78 MAX.
0
1
1
0.8
0.5 ±0.2
0
+
–
5.37 MAX.
0.10
1
4
8
5
1, 2, 3
4
5, 6, 7, 8 ; Drain
; Source
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
#
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