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參數資料
| 型號： | UPA2716GR |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING P-CHANNEL POWER MOSFET |
| 中文描述： | 開關的P -溝道功率MOSFET |
| 文件頁數： | 1/7頁 |
| 文件大小： | 149K |
| 代理商： | UPA2716GR |
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confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
μ
PA2716GR
SWITCHING
P-CHANNEL POWER MOS FET
DATA SHEET
Document No. G16827EJ2V0DS00 (2nd edition)
Date Published July 2004 NS CP(K)
Printed in Japan
2004
The mark
shows major revised points.
DESCRIPTION
The
μ
PA2716GR is P-Channel MOS Field Effect Transistor
designed for power management applications of notebook
computers and Li-ion battery protection circuit.
FEATURES
Low on-state resistance
R
DS(on)1
= 7.0 m
MAX. (V
GS
= –10 V, I
D
= –7.0 A)
R
DS(on)2
= 11.3 m
MAX. (V
GS
= –4.5 V, I
D
= –7.0 A)
Low C
iss
: C
iss
= 3000 pF TYP.
Built-in gate protection diode
Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA2716GR
Power SOP8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
–30
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
m
20
m
14
m
140
2
V
Drain Current (DC)
Drain Current (pulse)
Note1
Total Power Dissipation
Note2
Total Power Dissipation
Note3
I
D(DC)
A
I
D(pulse)
A
P
T1
W
P
T2
2
W
Channel Temperature
T
ch
150
°C
Storage Temperature
Single Avalanche Current
Note4
Single Avalanche Energy
Note4
T
stg
–55 to + 150
°C
I
AS
–14
A
E
AS
19.6
mJ
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Mounted on ceramic substrate of 1200 mm
2
x 2.2 mm
3.
Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mm, PW = 10 sec
4.
Starting T
ch
= 25°C, V
DD
= –15 V, R
G
= 25
, L = 100
μ
H, V
GS
= –20
→
0 V
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
8
5
1.27
0.12 M
6.0 ±0.3
4.4
0.40
+0.10
0.78 MAX.
0
1
1
0.8
0.5 ±0.2
0
+
–
5.37 MAX.
0.10
1
4
1, 2, 3
4
5, 6, 7, 8 : Drain
: Source
EQUIVALENT CIRCUIT
Drain
Source
Body
Diode
Gate
Protection
Diode
Gate
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| UPA2717GR | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING P-CHANNEL POWER MOSFET |
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| UPA2719AGR-E1-AT | 功能描述:MOSFET LV 8SOP RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| UPA2719AGR-E2-AT | 功能描述:MOSFET P-CH 30V 8-SOIC RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| UPA2719GR | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING P-CHANNEL POWER MOSFET |
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