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參數資料
| 型號： | UPA620TT |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | N溝道MOS場效應晶體管開關 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 67K |
| 代理商： | UPA620TT |
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confirm that this is the latest version.
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availability and additional information.
MOS FIELD EFFECT TRANSISTOR
μ
PA620TT
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No. G16111EJ1V0DS00 (1st edition)
Date Published September 2002 NS CP(K)
Printed in Japan
2002
DESCRIPTION
The
μ
PA620TT is a switching device which can be driven directly by a
2.5 V power source.
This device features a low on-state resistance and excellent switching
characteristics, and is suitable for applications such as power switch of
portable machine and so on.
FEATURES
2.5 V drive available
Low on-state resistance
R
DS(on)1
= 38 m
MAX. (V
GS
= 4.5 V, I
D
= 2.5 A)
R
DS(on)2
= 39 m
MAX. (V
GS
= 4.0 V, I
D
= 2.5 A)
R
DS(on)3
= 54 m
MAX. (V
GS
= 2.5 V, I
D
= 2.5 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA620TT
6 pin WSOF (1620)
Marking: WA
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
A
= 25°C)
Drain Current (pulse)
Note1
Total Power Dissipation
Total Power Dissipation
Note2
Channel Temperature
Storage Temperature
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
20
V
V
A
A
W
W
°C
°C
±
12
±
5.0
±
20
0.2
1.5
150
–55 to +150
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Mounted on FR-4 board of 5000 mm
2
x 1.1 mm, t
≤
5
sec.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
0.05 S
2.0±0.2
0
0
2
1
0.65
0.65
0
~
0.05
S
MAX. 0.8
0
+
0
0.2
+0.1
0.05
0.1
S
M
5
6
4
3
1
2
1,2,5,6: Drain
3 : Gate
4 : Source
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
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| UPA621TT | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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