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參數(shù)資料
| 型號： | UPA828TC |
| 英文描述： | Discrete |
| 中文描述： | 離散 |
| 文件頁數(shù)： | 1/16頁 |
| 文件大?。?/td> | 78K |
| 代理商： | UPA828TC |
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
NPN SILICON RF TWIN TRANSISTOR
μ
PA828TC
NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS)
IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
Document No. PU10167EJ01V0DS (1st edition)
Date Published June 2002 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices 2002
DATA SHEET
FEATURES
Low phase distortion transistor suited for OSC applications
f
T
= 9.0 GHz TYP.,
S
21e
2
= 7.5 dB TYP. @ V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
NF = 1.3 dB @ V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
Built-in 2 transistors (2
×
2SC5436)
Flat-lead 6-pin thin-type ultra super minimold package
BUILT-IN TRANSISTORS
Q1, Q2
3-pin thin-type ultra super minimold part No.
2SC5436
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
μ
PA828TC
50 pcs (Non reel)
8 mm wide embossed taping
μ
PA828TC-T1
3 kpcs/reel
Pin 6 (Q1 Base), Pin 5 (Q2 Emitter), Pin 4 (Q2 Base)
face the perforation side of the tape
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA828TD-A | 功能描述:射頻雙極小信號晶體管 NPN Silicn Amp Oscilltr Dul Trnsist RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| UPA828TD-T3-A | 功能描述:射頻雙極小信號晶體管 NPN Silicn Amp Oscilltr Dul Trnsist RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| UPA828TF | 制造商:NEC 制造商全稱:NEC 功能描述:HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD |
| UPA828TF_99 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TWIN TRANSISTOR |
| UPA828TF-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TWIN TRANSISTOR |
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