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參數資料
| 型號： | UPA863TD-T3 |
| 英文描述： | BJT |
| 中文描述： | 雙極型晶體管 |
| 文件頁數： | 1/28頁 |
| 文件大?。?/td> | 142K |
| 代理商： | UPA863TD-T3 |
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DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P15734EJ1V0DS00 (1st edition)
Date Published September 2001 NS CP(K)
Printed in Japan
2001
NPN SILICON RF TWIN TRANSISTOR
μ
PA863TC
NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)
IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
FEATURES
Low voltage operation
2 different built-in transistors (2SC5436, 2SC5800)
Q1: High gain transistor suited for buffer applications
f
T
= 12.0 GHz TYP.,
S
21e
Q2: Low phase distortion transistor suited for OSC applications
f
T
= 4.5 GHz TYP.,
S
21e
Flat-lead 6-pin thin-type ultra super minimold package
2
= 9.0 dB TYP. @ V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
2
= 4.0 dB TYP. @ V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
BUILT-IN TRANSISTORS
Q1
Q2
3-pin thin-type ultra super minimold part No.
2SC5436
2SC5800
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
μ
PA863TC
50 pcs (Non reel)
8 mm wide embossed taping
μ
PA863TC-T1
3 kpcs/reel
Pin 6 (Q1 Base), Pin 5 (Q2 Emitter), Pin 4 (Q2 Base)
face the perforation side of the tape
Remark
To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 50 pcs.
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
相關PDF資料 |
PDF描述 |
|---|---|
| UPA871TD | TRANSISTOR | BJT | PAIR | NPN | 5.5V V(BR)CEO | 100MA I(C) | TSOP |
| UPA871TD-T3 | TRANSISTOR | BJT | PAIR | NPN | 5.5V V(BR)CEO | 100MA I(C) | TSOP |
| UPA872TD | Discrete |
| UPA872TD-T3 | TRANSISTOR | BJT | PAIR | NPN | 5.5V V(BR)CEO | 100MA I(C) | SOT-363VAR |
| UPA873TC | Discrete |
相關代理商/技術參數 |
參數描述 |
|---|---|
| UPA863TD-T3-A | 功能描述:射頻雙極小信號晶體管 Silicon Amp/Oscilltr Twin/Dual Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發射極最大電壓 VCEO:15 V 發射極 - 基極電壓 VEBO:2 V 集電極連續電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| UPA871TD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | NPN | 5.5V V(BR)CEO | 100MA I(C) | TSOP |
| UPA871TD-T3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | NPN | 5.5V V(BR)CEO | 100MA I(C) | TSOP |
| UPA872TD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| UPA872TD-T3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | NPN | 5.5V V(BR)CEO | 100MA I(C) | SOT-363VAR |
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