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參數(shù)資料
| 型號： | UPA880TS-T3 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PACKAGE) |
| 中文描述： | npn型硅鍺射頻晶體管（2不同的元素）在6針超鉛無MINIMOLD（1007包） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 54K |
| 代理商： | UPA880TS-T3 |
PRELIMINARY DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
NPN SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)
IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PACKAGE)
Document No. PU10462EJ01V0DS (1st edition)
Date Published January 2004 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices 2004
NPN SiGe RF TWIN TRANSISTOR
μ
PA880TS
FEATURES
2 different built-in transistors (NESG2046M33, NESG2107M33)
Q1: High gain SiGe transistor
f
T
= 18 GHz TYP.,
S
21e
Q2: Low phase distortion SiGe transistor suited for OSC applications
f
T
= 10 GHz TYP.,
S
21e
6-pin super lead-less minimold (1007 package)
BUILT-IN TRANSISTORS
2
= 13 dB TYP. @ V
CE
= 1 V, I
C
= 15 mA, f = 2 GHz
2
= 9 dB TYP. @ V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
Q1
Q2
3-pin super lead-less minimold part No.
NESG2046M33
NESG2107M33
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
μ
PA880TS
50 pcs (Non reel)
8 mm wide embossed taping
μ
PA880TS-T3
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
10 kpcs/reel
Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape
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