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參數資料
| 型號： | UPA895TD |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON RF TWIN TRANSISTOR |
| 中文描述： | NPN硅射頻雙晶體管 |
| 文件頁數： | 1/10頁 |
| 文件大?。?/td> | 129K |
| 代理商： | UPA895TD |
UPA895TD
NEC's NPN SILICON RF
TWIN TRANSISTOR
LOW VOLTAGE, LOW CURRENT OPERATION
SMALL PACKAGE OUTLINE:
1.2 mm x 0.8 mm
LOW HEIGHT PROFILE:
Just 0.50 mm high
TWO LOW NOISE OSCILLATOR TRANSISTORS:
NE851
IDEAL FOR 1-3 GHz OSCILLATORS
FEATURES
OUTLINE DIMENSIONS
(Units in mm)
Package Outline TD
(TOP VIEW)
DESCRIPTION
NEC's UPA895TD contains two NE851 high frequency silicon
bipolar chips. The NE851 is an excellent oscillator chip, featur-
ing low 1/f noise and high immunity to pushing effects. NEC's
new ultra small TD package is ideal for all portable wireless
applications where reducing board space is a prime consider-
ation. Each transistor chip is independently mounted and
easily configured for oscillator/buffer amplifier and other
applications.
California Eastern Laboratories
k
C1
Q2
Q1
B2
E2
E1
B1
C2
(Top View)
0
0
+
-
1
2
3
0
0
0
0
4
5
6
1.0±0.05
0.8
+0.07
-0.05
1
3
4
5
6
2
1
+
-
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
PART NUMBER
PACKAGE OUTLINE
UPA895TD
TD
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
I
CBO
I
EBO
h
FE
f
T
Cre
|S
21E
|
2
|S
21
|S
21E
|
2
E
|
2
Insertion Power Gain
I
at V
CE
= 1 V, I
C
=15 mA, f = 2 GHz
Collector Cutoff Current at V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
DC Current Gain
1
at V
CE
= 3 V, I
C
= 7 mA
Gain Bandwidth at V
CE
= 1 V, I
C
= 15 mA, f = 2 GHz
Feedback Capacitance
2
at V
CB
= 3 V, I
E
= 0, f = 1 MHz
Insertion Power Gain at V
CE
= 1 V, I
C
=5 mA, f = 2 GHz
nA
nA
600
600
145
100
5.0
120
6.5
0.6
4.0
5.5
GHz
pF
dB
dB
0.8
3.0
4.5
NF
Noise Figure at V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
dB
1.9
2.5
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
Notes: 1. Pulsed measurement, pulse width
≤
350
μ
s, duty cycle
≤
2 %.
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to
guard pin of capacitances meter.
Q
ORDERING INFORMATION
PART NUMBER
UPA895TD-T3
QUANTITY
10K Pcs./Reel
PACKAGING
Tape & Reel
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相關代理商/技術參數 |
參數描述 |
|---|---|
| UPA895TD-A | 功能描述:射頻雙極小信號晶體管 NPN Dual High Freq RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發射極最大電壓 VCEO:15 V 發射極 - 基極電壓 VEBO:2 V 集電極連續電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| UPA895TD-T3 | 功能描述:射頻雙極小信號晶體管 NPN Dual High Freq RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發射極最大電壓 VCEO:15 V 發射極 - 基極電壓 VEBO:2 V 集電極連續電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| UPA895TD-T3-A | 功能描述:射頻雙極小信號晶體管 NPN Dual High Freq RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發射極最大電壓 VCEO:15 V 發射極 - 基極電壓 VEBO:2 V 集電極連續電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| UPA895TS-A | 功能描述:射頻雙極小信號晶體管 NPN Silicn AMP Oscilltr Twn Trnst RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發射極最大電壓 VCEO:15 V 發射極 - 基極電壓 VEBO:2 V 集電極連續電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| UPA895TS-T3-A | 功能描述:射頻雙極小信號晶體管 NPN Silicn AMP Oscilltr Twn Trnst RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發射極最大電壓 VCEO:15 V 發射極 - 基極電壓 VEBO:2 V 集電極連續電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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