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參數資料
| 型號： | UPC2715T |
| 廠商： | NEC Corp. |
| 英文描述： | LOW POWER CONSUMPTION SILICON MMIC AMPLIFIER |
| 中文描述： | 低功耗硅MMIC放大器 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 81K |
| 代理商： | UPC2715T |
The UPC2714T and UPC2715T are Silicon Monolithic inte-
grated circuits manufactured using the NESAT III process.
These devices are suitable for applications which require low
power consumption and wide frequency operation. They are
designed for low cost, low power consumption gain stages in
cellular radios, GPS receivers, and PCN applications.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
DESCRIPTION
LOW POWER CONSUMPTION
SILICON MMIC AMPLIFIER
UPC2714T
UPC2715T
FEATURES
LOW POWER CONSUMPTION:
15 mW (V
CC
= 3.4 V, I
CC
= 4.5 mA)
HIGH POWER GAIN:
20 dB (UPC2715T)
WIDE FREQUENCY RESPONSE:
2 GHz (UPC2714T)
INTERNAL CURRENT REGULATION MINIMIZES GAIN
CHANGE OVER TEMPERATURE
SUPER SMALL PACKAGE
TAPE AND REEL PACKAGING OPTION AVAILABLE
GAIN vs. FREQUENCY
UPC2715
UPC2714
0 0.5 1.0 1.5 2.0
20
15
10
5
0
Frequency, f (GHz)
G
S
PART NUMBER
PACKAGE OUTLINE
UPC2714T
T06
UPC2715T
T06
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
MIN
TYP
MAX
I
CC
G
S
f
U
Circuit Current
Small Signal Gain
Upper Limit Operating Frequency
(The gain at f
U
is 3 dB down from the gain at 0.1 GHz)
Gain Flatness, f = 0.1
~
0.6 GHz
Saturated Output Power
Noise Figure
Input Return Loss
Output Return Loss
Isolation
Gain-Temperature Coefficient
Thermal Resistance (Junction to Ambient)
mA
dB
3.3
8.5
4.5
11.5
5.7
15.5
3.3
16
4.5
19
5.7
23
GHz
dB
dBm
dB
dB
dB
dB
dB/
°
C
°
C/W
1.4
1.8
±
1.0
-7
5.0
13
8
27
+0.006
0.9
1.2
±
1.0
-6
4.5
17
8
33
+0.006
G
S
P
SAT
NF
RL
IN
RL
OUT
ISOL
G
T
R
TH
-10
-9
6.5
6.0
10
5
22
12
5
28
200
200
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C, f = 0.5 GHz, V
CC
= 3.4 V)
California Eastern Laboratories
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