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參數(shù)資料
| 型號(hào)： | UPD442002-X |
| 廠商： | NEC Corp. |
| 英文描述： | 2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION |
| 中文描述： | 200萬位CMOS靜態(tài)RAM 128K的字由16位溫度范圍 |
| 文件頁(yè)數(shù)： | 1/24頁(yè) |
| 文件大小： | 281K |
| 代理商： | UPD442002-X |
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MOS INTEGRATED CIRCUIT
μ
PD442002-X
2M-BIT CMOS STATIC RAM
128K-WORD BY 16-BIT
EXTENDED TEMPERATURE OPERATION
DATA SHEET
Document No. M14670EJ7V
1
DS00 (7th edition)
Date Published
Jul
y
200
4
NS CP(K)
Printed in Japan
The mark
ì
ì
ì
shows major revised points.
2000
Description
The
μ
PD442002-X is a high speed, low power, 2,097,152 bits (131,072 words by 16 bits) CMOS static RAM.
The
μ
PD442002-X is packed in 48-pin TAPE FBGA.
Features
131,072 words by 16 bits organization
Fast access time : 70, 85, 100 ns (MAX.)
Byte data control : /LB (I/O1 to I/O8), /UB (I/O9 to I/O16)
Low voltage operation : V
CC
= 2.7 to 3.6 V (-BB70X)
V
CC
= 2.2 to 3.6 V (-BC70X)
V
CC
= 1.8 to 2.2 V (-DD85X, -DD10X)
Low V
CC
data retention : 1.0 V (MIN.)
Operating ambient temperature : T
A
= –25 to +85 °C
Output Enable input for easy application
μ
PD442002
Access time
Operating supply
Operating ambient
Supply current
ns (MAX.)
voltage
temperature
At operating
At standby
At data retention
V
°C
mA (MAX.)
μ
A (MAX.)
μ
A (MAX.)
-BB70X
70
2.7 to 3.6
25 to +85
30
4
2
-BC70X
70
2.2 to 3.6
-DD85X, -DD10X
85, 100
1.8 to 2.2
15
3
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