欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: UPD44324092F5-E37-EQ2-A
廠商: NEC Corp.
元件分類: DRAM
英文描述: 36M-BIT DDRII SRAM 2-WORD BURST OPERATION
中文描述: 36M條位SRAM的2條DDRII字爆發運作
文件頁數: 1/40頁
文件大小: 361K
代理商: UPD44324092F5-E37-EQ2-A
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS INTEGRATED CIRCUIT
μ
PD
44324082, 44324092, 44324182, 44324362
36M-BIT DDRII SRAM
2-WORD BURST OPERATION
Document No. M16780EJ3V0DS00 (3rd edition)
Date Published March 2006 NS CP(K)
Printed in Japan
DATA SHEET
2003
Description
The
μ
PD44324082 is a 4,194,304-word by 8-bit, the
μ
PD44324092 is a 4,194,304-word by 9-bit, the
μ
PD44324182 is a
2,097,152-word by 18-bit and the
μ
PD44324362 is a 1,048,576-word by 36-bit synchronous double data rate static RAM
fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.
The
μ
PD44324082,
μ
PD44324092,
μ
PD44324182 and
μ
PD44324362 integrate unique synchronous peripheral circuitry
and a burst counter. All input registers controlled by an input clock pair (K and K#) are latched on the positive edge of K
and K#.
These products are suitable for application which require synchronous operation, high speed, low voltage, high
density and wide bit configuration.
These products are packaged in 165-pin PLASTIC BGA.
Features
1.8 ± 0.1 V power supply
165-pin PLASTIC BGA package (13 x 15)
HSTL Interface
DLL circuitry for wide output data valid window and future frequency scaling
Pipelined double data rate operation
Common data input/output bus
Two-tick burst for low DDR transaction size
Two input clocks (K and K#) for precise DDR timing at clock rising edges only
Two output clocks (C and C#) for precise flight time
and clock skew matching-clock and data delivered together to receiving device
Internally self-timed write control
Clock-stop capability. Normal operation is restored in 1,024 cycles after clock is resumed.
User programmable impedance output
Fast clock cycle time : 3.7 ns (270 MHz), 4.0 ns (250 MHz), 5.0 ns (200 MHz)
Simple control logic for easy depth expansion
JTAG boundary scan
<R>
相關PDF資料
PDF描述
UPD44324092F5-E40-EQ2-A 36M-BIT DDRII SRAM 2-WORD BURST OPERATION
UPD44324092F5-E50-EQ2-A 36M-BIT DDRII SRAM 2-WORD BURST OPERATION
UPD44324182F5-E37-EQ2 36M-BIT DDRII SRAM 2-WORD BURST OPERATION
UPD44324182F5-E37-EQ2-A 36M-BIT DDRII SRAM 2-WORD BURST OPERATION
UPD44324182F5-E40-EQ2-A 36M-BIT DDRII SRAM 2-WORD BURST OPERATION
相關代理商/技術參數
參數描述
UPD44324182BF5-E40-FQ1-A 制造商:Renesas Electronics Corporation 功能描述:RENUPD44324182BF5-E40-FQ1-A 36M-BIT(2M-W
UPD44324185BF5-E40-FQ1 制造商:Renesas Electronics Corporation 功能描述:SRAM Chip Sync Dual 1.8V 36M-Bit 2M x 18 0.45ns 165-Pin BGA 制造商:Renesas Electronics Corporation 功能描述:36MB, DDRII SRAM - Trays 制造商:Renesas Electronics Corporation 功能描述:IC SRAM DDRII 36MBIT 165BGA
UPD44324362BF5-E40-FQ1 制造商:Renesas Electronics Corporation 功能描述:36MB, DDRII SRAM - Trays 制造商:Renesas Electronics Corporation 功能描述:IC SRAM DDRII 36MBIT 165BGA
UPD44324362BF5-E40-FQ1-A 制造商:Renesas Electronics Corporation 功能描述:36MB, DDRII SRAM - Trays 制造商:Renesas Electronics Corporation 功能描述:IC SRAM DDRII 36MBIT 165BGA
UPD44324365BF5-E40-FQ1 制造商:Renesas Electronics Corporation 功能描述:36MB, DDRII SRAM - Trays 制造商:Renesas Electronics Corporation 功能描述:IC SRAM DDRII 36MBIT 165BGA
主站蜘蛛池模板: 洪雅县| 彝良县| 博爱县| 望城县| 太仆寺旗| 剑河县| 武定县| 南和县| 常德市| 赤峰市| 金沙县| 奎屯市| 宜春市| 乌鲁木齐市| 滁州市| 遂宁市| 瓦房店市| 枣强县| 德阳市| 萍乡市| 靖远县| 南安市| 咸宁市| 灌南县| 张家川| 南充市| 华安县| 如皋市| 时尚| 平潭县| 沙河市| 通州区| 星子县| 珲春市| 荣成市| 石泉县| 江口县| 兖州市| 额尔古纳市| 丽水市| 杭锦后旗|