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參數資料
| 型號： | UPG133G-E1 |
| 廠商： | NEC Corp. |
| 英文描述： | L-BAND SPDT SWITCH |
| 中文描述： | L波段單刀雙擲開關 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 87K |
| 代理商： | UPG133G-E1 |
1996
DATA SHEET
GaAs INTEGRATED CIRCUIT
μ
PG133G
DESCRIPTION
UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular
or cordless telephone application.
The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss.
It housed in an original 8 pin SSOP that is smaller than usual 8 pin SOP and easy to install and contributes to
miniaturizing the system.
It can be used in wide-band switching applications.
FEATURES
Maximum transmission power :
Low insertion loss
High switching speed
Small package
0.25 W (typ.)
0.6 dB (typ.) at f = 2 GHz
10 ns
8 pins SSOP
:
:
:
APPLICATION
Digital cordless telephone
Digital hand-held cellular phone, WLAN
:
PHS, PCS, DECT etc.
ORDERING INFORMATION
PART NUMBER
PACKAGE
PACKING FORM
μ
PG133G-E1
8 pin plastic SSOP
Carrier tape width 12 mm.
QTY 2kp/Reel.
For evaluation sample order, please contact your local NEC sales office.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Control Voltage
Input Power
Total Power Dissipation
Operating Case Temperature
Storage Temperature
V
CONT
P
in
P
tot
T
opt
T
stg
–6 to +0.6
25
0.2
–65 to +90
–65 to +150
V
dBm
W
C
C
CAUTION:
The IC must be handled with care to prevent static discharge because its circuit is composed
of GaAs MES FET.
L-BAND SPDT SWITCH
Document No. P10733EJ2V0DS00 (2nd edition)
Date Published April 1996 P
Printed in Japan
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