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參數(shù)資料
型號: UPG158TB-E3
廠商: NEC Corp.
英文描述: L, S- BAND SPDT SWITCH
中文描述: 升,S波段單刀雙擲開關
文件頁數(shù): 1/8頁
文件大小: 56K
代理商: UPG158TB-E3
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
GaAs INTEGRATED CIRCUIT
μ
PG158TB
L, S- BAND SPDT SWITCH
Document No. P14267EJ2V0DS00 (2nd edition)
Date Published November 1999 N CP(K)
Printed in Japan
DATA SHEET
1999
The mark
shows major revised points.
DESCRIPTION
The
μ
PG158TB is a L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital
cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz to 2.5
GHz, having the low insertion loss. It housed in an original 6-pin super minimold package that is smaller than usual
6-pin minimold easy to install and contributes to miniaturizing the system.
FEATURES
Low Insertion Loss: L
INS
= 0.3 dB TYP. @V
CONT
= +3.0 V/0 V, f = 1 GHz
L
INS
= 0.4 dB TYP. @V
CONT
= +3.0 V/0 V, f = 2 GHz
L
INS
= 0.5 dB TYP. @V
CONT
= +3.0 V/0 V, f = 2.5 GHz
High isolation: ISL = 27 dB TYP. @V
CONT
= +3.0 V/0 V, f = 0.5 to 2 GHz
Small 6-pin super minimold package (Size: 2.0
×
1.25
×
0.9 mm)
APPLICATIONS
L, S-band digital cellular or cordless telephone
PCS, WLAN, WLL and Bluetooth applications
ORDERING INFORMATION
Part Number
Marking
Package
Supplying Form
μ
PG158TB-E3
G1M
6-pin super minimold
Embossed tape 8 mm wide.
Pin 1, 2, 3 face to tape perforation side.
Qty 3 kp/reel.
Remark
To order evaluation samples, please contact your local NEC sales office. (Part number for sample
order:
μ
PG158TB)
Caution The IC must be handled with care to prevent static discharge because its circuit is composed of
GaAs MES FET.
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