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參數資料
| 型號： | UPG174TA |
| 廠商： | NEC Corp. |
| 英文描述： | L-BAND PA DRIVER AMPLIFIER |
| 中文描述： | L波段功率放大器驅動放大器 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 66K |
| 代理商： | UPG174TA |
L-BAND PA DRIVER AMPLIFIER
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
GaAs INTEGRATED CIRCUIT
μ
PG174TA
Document No. P13230EJ2V0DS00 (2nd edition)
Date Published January 2000 N CP(K)
Printed in Japan
DATA SHEET
The mark shows major revised points.
1998, 2000
DESCRIPTION
The
μ
PG174TA is L-Band PA driver amplifier developed for digital cellular telephone and PCS applications. This
device feature high output power and low distortion with 2.8 V low voltage and 35 mA low current operation. It is
housed in a very small 6-pin minimold package available on tape-and-reel and easy to install and contributes to
miniaturizing the systems.
FEATURES
y
Low operation voltage : V
DD
= 2.8 V
y
Low distortion
Off-chip input and output matching
y
Low operation current : I
DD
= 35 mA TYP. @ V
DD
= 2.8 V, f
RF
= 1 429 to 1 453 MHz, P
out
= +10 dBm
Off-chip input and output matching
y
6-pin minimold package
: P
adj1
= –60 dBc TYP. @ V
DD
= 2.8 V, f
RF
= 1 429 to 1 453 MHz, P
out
= +10 dBm
APPLICATION
y
Digital Cellular: PDC1.5G, DCS1800, PCS, etc.
ORDERING INFORMATION
Part Number
Package
Supplying Form
μ
PG174TA-E3
6-pin minimold
Carrier tape width is 8 mm.
Qty 3kp/reel.
Remark
To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:
μ
PG174TA)
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameters
Symbol
Ratings
Unit
Supply Voltage
V
DD
6.0
V
Input Power
P
in
–10
dBm
Total Power Dissipation
P
tot
170
Note
mW
Operating Ambient Temperature
T
A
–30 to +90
°C
Storage Temperature
T
stg
–35 to +150
°C
Note
Mounted on a 50
×
50
×
1.6 mm double copper clad epoxy glass PWB, T
A
= +85°C
Caution
The IC must be handled with care to prevent static discharge because its circuit composed of
GaAs HJ-FET.
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