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參數資料
| 型號： | US1G-HE3 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關、功率) |
| 英文描述： | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC |
| 封裝： | LEAD FREE, PLASTIC, SMA, 2 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 418K |
| 代理商： | US1G-HE3 |
US1A thru US1M
Document Number 88768
05-Aug-05
Vishay General Semiconductor
www.vishay.com
1
DO-214AC (SMA)
Surface Mount Ultrafast Rectifier
Major Ratings and Characteristics
IF(AV)
1.0 A
VRRM
50 V to 1000 V
IFSM
30 A
trr
50 ns, 75 ns
VF
1.0 V, 1.7 V
Tj max.
150 °C
Features
Low profile package
Ideal for automated placement
Glass passivated chip junction
Ultrafast reverse recovery time
Low switching losses, high efficiency
High forward surge capability
Meets MSL level 1, per J-STD-020C
Solder Dip 260 °C, 40 seconds
Typical Applications
For use in high frequency rectification and freewheel-
ing application in switching mode converters and
inverters for consumer, computer, automotive and
Telecommunication
Mechanical Data
Case: DO-214AC (SMA)
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
Maximum Ratings
TA = 25 °C unless otherwise specified
Parameter
Symbol
US1A
US1B
US1D
US1G
US1J US1K US1M
Units
Device Marking Code
UA
UB
UD
UG
UJ
UK
UM
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
V
Maximum average forward rectified current at TL = 110 °C
IF(AV)
1.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
30
A
Operating and storage temperature range
TJ, TSTG
- 55 to + 150
°C
相關PDF資料 |
PDF描述 |
|---|---|
| US1J-E3 | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC |
| US1K-HE3 | 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC |
| US1AP | 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC |
| US1BP | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC |
| USB-AB1011-M040 | INTERCONNECTION DEVICE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| US1GHE3/2GT | 功能描述:整流器 400 Volt 1.0A 50ns 30 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| US1GHE3/5AT | 功能描述:整流器 400 Volt 1.0A 50ns 30 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| US1GHE3/61T | 功能描述:整流器 400 Volt 1.0A 50ns 30 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| US1GHE3/63T | 功能描述:整流器 400 Volt 1.0A 50ns 30 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| US1GHE3_A/H | 制造商:Vishay Semiconductors 功能描述:DIODE; Diode Type:Fast Recovery; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:400V; Forward Current If(AV):1A; Forward Voltage VF Max:1V; Reverse Recovery Time trr Max:50ns; Forward Surge Current Ifsm Max:30A ;RoHS Compliant: Yes |
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