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參數資料
| 型號： | UTC2SD882S |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | NPN EPITAXIAL SILICON TRANSISTOR |
| 中文描述： | npn型外延硅晶體管 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 75K |
| 代理商： | UTC2SD882S |
UTC 2SD882S NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R201-024,A
MEDIUM POWER LOW VOLTAGE
TRANSISTOR
FEATURES
*High current output up to 3A
*Low saturation voltage
*Complement to 2SB772S
APPLICATIONS
* Audio power amplifier
* DC-DC convertor
* Voltage regulator
TO-92
1
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS
(Ta=25
°
C ,unless otherwise specified )
PARAMETERS
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector dissipation( Ta=25
°
C)
Collector current(DC)
Collector current(PULSE)
Base current
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS
(Ta=25
°
C,unless otherwise specified)
PARAMETER
SYMBOL
Collector cut-off current
I
CBO
Emitter cut-off current
I
EBO
DC current gain(note 1)
h
FE1
h
FE2
Collector-emitter saturation voltage
V
CE
(sat)
Base-emitter saturation voltage
V
BE
(sat)
Current gain bandwidth product
f
T
Output capacitance
Cob
Note 1:Pulse test:PW<300
μ
s,Duty Cycle<2%
CLASSIFICATION OF hFE2
RANK
Q
RANGE
100-200
SYMBOL
V
CBO
V
CEO
V
EBO
Pc
Ic
Ic
I
B
T
j
T
STG
RATING
40
30
5
0.5
3
7
0.6
150
-55 ~ +150
UNIT
V
V
V
W
A
A
A
°
C
°
C
TEST CONDITIONS
V
CB
=30V,I
E
=0
V
EB
=3V,Ic=0
V
CE
=2V,Ic=20mA
V
CE
=2V,Ic=1A
Ic=2A,I
B
=0.2A
Ic=2A,I
B
=0.2A
V
CE
=5V,Ic=0.1A
V
CB
=10V,I
E
=0,f=1MHz
MIN
30
100
TYP
200
150
0.3
1.0
80
45
MAX
1000
1000
400
0.5
2.0
UNIT
nA
nA
V
V
MHz
pF
P
E
160-320
200-400
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