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參數資料
| 型號： | UTCD965SS |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | NPN EPITAXIAL SILICON TRANSISTOR |
| 中文描述： | npn型外延硅晶體管 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 75K |
| 代理商： | UTCD965SS |
UTC D965SS / D965ASS
NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R206-016,B
LOW VOLTAGE HIGH CURRENT
NPN TRANSISTOR
FEATURES
*Collector current up to 5A
* D965SS : Collector-Emitter voltage up to 20 V
* D965ASS : Collector-Emitter voltage up to 30 V
APPLICATIONS
* Audio amplifier
* Flash unit of camera
* Switching circuit
MARKING
(D965SS)
MARKING
(D965ASS)
SOT-23
1
2
3
1: EMITTER 2: BASE 3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS
( Ta=25
°
C ,unless otherwise specified )
PARAMETER
Collector-base voltage
Collector-emitter voltage
D965SS
D965ASS
Emitter-base voltage
Collector dissipation(Ta=25
°
C
)
Collector current
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS
(Ta=25
°
C,unless otherwise specified)
PARAMETER
SYMBOL
Collector-base breakdown voltage
BV
CBO
Collector-emitter breakdown voltage
D965SS
D965ASS
Emitter-base breakdown voltage
BV
EBO
Collector cut-off current
I
CBO
Emitter cut-off current
I
EBO
SYMBOL
V
CBO
RATING
40
20
30
7
750
5
150
-65 ~ +150
UNIT
V
V
CEO
V
V
EBO
Pc
Ic
T
j
T
STG
V
mW
A
°
C
°
C
TEST CONDITIONS
Ic=100
μ
A,I
E
=0
Ic=1mA,I
B
=0
MIN
40
20
30
7
TYP
MAX
UNIT
V
BV
CEO
V
I
E
=10
μ
A,Ic=0
V
CB
=10V,I
E
=0
V
EB
=7V,Ic=0
V
nA
nA
100
100
D65
D65A
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