欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: UTV120
英文描述: BJT
中文描述: 雙極型晶體管
文件頁數: 1/3頁
文件大小: 263K
代理商: UTV120
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
UTV120
12 Watts, 26.5 Volts, Class A
UHF Television - Band IV & V
GENERAL DESCRIPTION
The UTV 120 is a COMMON EMITTER transistor capable of providing 12
Watts Peak, Class A, RF Output Power over the band 470 - 860 MHz. The
transistor includes double input prematching for full broadband capability.
Gold Metalization and Diffused Ballasting are used to provide high reliability
and supreme ruggedness.
CASE OUTLINE
55JT, STYLE 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 80 Watts
Maximum Voltage and Current
BVces Collector to Emitter Voltage 45 Volts
BVceo Collector to Emitter Voltage 28 Volts
BVebo Emitter to Base Voltage 4 Volts
Ic Collector Current 3.5 Amps
Maximum Temperatures
Storage Temperature - 65 to + 150 C
Operating Junction Temperature + 200 C
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Pg
IMD
1
VSWR
1
Power Out - Pk Sync
Power Input
Power Gain
Intermodulation Distortion
Load Mismatch Tolerance
F = 470 - 860 MHz
Vcc = 26.5 Volts
Ic = 1.7 Amps
Pref = 12 Watts
F = 860 MHz
12
8.9
9.5
1.55
-52
3:1
Watts
Watts
dB
dB
LVceo
2
BVces
2
BVebo
2
h
FE
Cob
2
θ
jc
2
Collector to Emitter
Breakdown
Collector to Base Breakdown
Emitter to Base Breakdown
Current Gain
Output Capacitance
Thermal Resistance
Ic = 65 mA
Ic = 25 mA
Ie = 10 mA
Vce = 5 V, 500 mA
Vcb = 26 V, F = 1
MHz
Tc = 25 C
o
28
45
4
10
23
1.6
Volts
Volts
Volts
pF
C/W
o
Note 1: F1=860 MHz, F2=863.5 MHz, F3=864.5 Mhz
European test method, Vision = - 8dB, Sideband= - 16dB, Sound = -7 dB
Note 2: Per side
Initial Issue June, 1994
相關PDF資料
PDF描述
UTV65B BJT
UUD1A102MCR1-MR CAP. 1000UF MINIREEL 50PCS
UUD1C101MCR1-MR CAP. 100UF MINIREEL 200PCS
UUD1C471MCR1-MR CAP. 470UF MINIREEL 100PCS
UUD1H010MCR1-MR CAP. 1UF MINIREEL 200PCS
相關代理商/技術參數
參數描述
UTV200 制造商:Microsemi Corporation 功能描述:LDMOS TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:TRANSISTOR BIPO 55JV-2 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT
UTV8100B 制造商:Microsemi Corporation 功能描述:UTV8100B - Bulk 制造商:Microsemi Corporation 功能描述:TRANSISTOR BIPO 55RT-2 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT
UTVB18-19PN 功能描述:標準環形連接器 10P Reverse Bayonet Pin Receptacle Sz 18 RoHS:否 制造商:Hirose Connector 系列:EM-W 產品類型:Accessories 位置/觸點數量:1 觸點類型: 觸點電鍍: 安裝風格:Cable 外殼材質: 端接類型:Clamp 電壓額定值:
UTVB18-19SN 功能描述:標準環形連接器 10P Reverse Bayonet Skt Receptacle Sz 18 RoHS:否 制造商:Hirose Connector 系列:EM-W 產品類型:Accessories 位置/觸點數量:1 觸點類型: 觸點電鍍: 安裝風格:Cable 外殼材質: 端接類型:Clamp 電壓額定值:
UTVB20-15PN 功能描述:標準環形連接器 7P Reverse Bayonet Pin Receptacle Sz 20 RoHS:否 制造商:Hirose Connector 系列:EM-W 產品類型:Accessories 位置/觸點數量:1 觸點類型: 觸點電鍍: 安裝風格:Cable 外殼材質: 端接類型:Clamp 電壓額定值:
主站蜘蛛池模板: 泸定县| 佛冈县| 洛川县| 克什克腾旗| 定陶县| 鸡泽县| 乡宁县| 牙克石市| 修水县| 京山县| 卢氏县| 米脂县| 民丰县| 遵义县| 临高县| 将乐县| 玛沁县| 翁牛特旗| 隆昌县| 弥渡县| 长泰县| 天津市| 临武县| 太原市| 宁远县| 安远县| 桐城市| 文化| 乐清市| 资源县| 吴桥县| 七台河市| 丹寨县| 阳江市| 固安县| 泾阳县| 石阡县| 河南省| 罗田县| 临漳县| 永平县|