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參數(shù)資料
型號(hào): V048K015T80
廠商: Vicor Corporation
元件分類(lèi): DC/DC變換器
英文描述: VI Chip - VTM Voltage Transformation Module
中文描述: 六芯片- VTM電壓轉(zhuǎn)換模塊
文件頁(yè)數(shù): 1/20頁(yè)
文件大小: 630K
代理商: V048K015T80
Vicor Corporation Tel: 800-735-6200 vicorpower.com
VI Chip Voltage Transformation Module
Rev. 1.6
Page 1 of 20
4
5
Closing the loop back to an input Pre-Regulation
Module (PRM) or DC-DC converter may be used to
compensate for R
OUT
.
R
θ
JC
Product Description
The V048K015T80 V
I Chip Voltage Transformation
Module (VTM) breaks records for speed, density and
efficiency to meet the demands of advanced DSP,
FPGA, ASIC, processor cores and microprocessor
applications at the point of load (POL) while providing
isolation from input to output. It achieves a response
time of less than 1 μs and delivers up to 80Ain a
volume of less than 0.25 in
3
while converting 48 V to
1.5 V with unprecedented efficiency. It may be
paralleled to deliver hundreds of amps at an output
voltage settable from 1.0 to 1.8 Vdc.
The VTM V048K015T80’s nominal output voltage is
1.5 Vdc from a 48 Vdc input factorized bus, V
f
, and is
controllable from 1.0 to 1.8 Vdc at no load, and from
0.9 V to 1.7 V at full load, over a V
f
input range of 32 to
57.6 Vdc. It can be operated either open- or closed-loop
depending on the output regulation needs of the
application. Operating open-loop, the output voltage
tracks its V
f
input voltage with a transformation ratio,
K=
1
/
32
, and an output resistance, R
OUT
=1.3 milliohm,
to enable applications requiring a programmable low
output voltage at high current and high efficiency.
The 1.5V VTM achieves break-through current density
of 320 A/in
3
in a V
I Chip package compatible with
standard pick-and-place and surface mount assembly
processes. The V
I Chip BGApackage supports in-board
mounting with a low profile of 0.16" (4mm) over the
board. AJ-lead package option supports on-board
surface mounting with a profile of only 0.25" (6mm)
over the board. The VTM’s fast dynamic response and
low noise eliminate the need for bulk capacitance at the
load, substantially increasing the POL density while
improving reliability and decreasing cost.
Absolute Maximum Ratings
Parameter
Values
Unit
Notes
+In to -In
-1.0 to 60.0
Vdc
+In to -In
100
Vdc
For 100 ms
PC to -In
-0.3 to 7.0
Vdc
TM to -In
-0.3 to 7.0
Vdc
SG to -In
500
mA
+Out to -Out
-0.5 to 5.0
Vdc
Isolation voltage
1500
Vdc
Input to Output
Operating junction temperature
-40 to 125
°C
See note 2
Output current
80
A
Continuous
Peak output current
120
A
For 1 ms
Case temperature during reflow
208
°C
Storage temperature
-40 to 150
°C
Output power
144
W
Continuous
Peak output power
216
W
For 1 ms
Thermal Resistance
Symbol
Parameter
Typ
Max
Units
Junction-to-case
1.1
1.5
°C/W
R
θ
JB
Junction-to-BGA
2.1
2.5
7.2
°C/W
R
θ
JA
Junction-to-ambient
3
6.5
°C/W
R
θ
JA
Junction-to-ambient
4
5.0
5.5
°C/W
VI Chip
Voltage Transformation Module
TM
– VTM
48V to 1.5V VI Chip Converter
80 A (120 A for 1 ms)
High density – up to 320 A/in
3
Small footprint – 80 A/in
2
Low weight – 0.4 oz (12 g)
Pick & Place / SMD
>92% efficiency at 1.5V
125°C operation
1 μs transient response
>3.5 million hours MTBF
No output filtering required
VI ChipBGA package
V048K015T80
1
V
f
= 32 - 57.6 V
V
OUT
= 1.0 - 1.8 V
I
OUT
= 80 A
K =
1
/
32
R
OUT
= 1.5 m
max
Notes
1. For complete product matrix, see chart on page 10.
2. The referenced junction is defined as the semiconductor having the highest temperature.This
temperature is monitored by the temperature monitor (TM) signal and by a shutdown comparator.
3. V048K015T80 surface mounted in-board to a 2" x 2" FR4 board, 4 layers 2 oz Cu, 300 LFM.
4. V048L015T80 (0.25"H integral Pin Fins) surface mounted on FR4 board, 300 LFM.
Actual size
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