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參數(shù)資料
型號(hào)： V54C3256404VDLJ8PC
廠商： PROMOS TECHNOLOGIES INC
元件分類： DRAM
英文描述： 64M X 4 SYNCHRONOUS DRAM, 6 ns, PBGA60
封裝： GREEN, MO-210, FBGA-60
文件頁(yè)數(shù)： 1/56頁(yè)
文件大小： 728K
代理商： V54C3256404VDLJ8PC
1
V54C3256(16/80/40)4VD
256Mbit SDRAM
3.3 VOLT, TSOP II / FBGA PACKAGE
16M X 16, 32M X 8, 64M X 4
V54C3256(16/80/40)4VD Rev. 1.7 May 2006
6
7PC
7
8PC
System Frequency (fCK)
166 MHz
143 MHz
125 MHz
Clock Cycle Time (tCK3)
6 ns
7 ns
8 ns
Clock Access Time (tAC3) CAS Latency = 3
5.4 ns
6 ns
Clock Access Time (tAC2) CAS Latency = 2
5.4 ns
6 ns
Features
■ 4 banks x 4Mbit x 16 organization
■ 4 banks x 8Mbit x 8 organization
■ 4 banks x16Mbit x 4 organization
■ High speed data transfer rates up to 166 MHz
■ Full Synchronous Dynamic RAM, with all signals
referenced to clock rising edge
■ Single Pulsed RAS Interface
■ Data Mask for Read/Write Control
■ Four Banks controlled by BA0 & BA1
■ Programmable CAS Latency: 2, 3
■ Programmable Wrap Sequence: Sequential or
Interleave
■ Programmable Burst Length:
1, 2, 4, 8, and full page for Sequential Type
1, 2, 4, 8 for Interleave Type
■ Multiple Burst Read with Single Write Operation
■ Automatic and Controlled Precharge Command
■ Random Column Address every CLK (1-N Rule)
■ Power Down Mode
■ Auto Refresh and Self Refresh
■ Refresh Interval: 8192 cycles/64 ms
■ Available in 54 Pin TSOP II, 60 Ball FBGA, 54
Ball FBGA
■ LVTTL Interface
■ Single +3.3 V
±0.3 V Power Supply
Description
The V54C3256(16/80/40)4VD is a four bank Syn-
chronous DRAM organized as 4 banks x 4Mbit x 16,
4 banks x 8Mbit x 8, or 4 banks x 16Mbit x 4. The
V54C3256(16/80/40)4VD achieves high speed data
transfer rates up to 166 MHz by employing a chip
architecture that prefetches multiple bits and then
synchronizes the output data to a system clock
All of the control, address, data input and output
circuits are synchronized with the positive edge of
an externally supplied clock.
Operating the four memory banks in an inter-
leaved fashion allows random access operation to
occur at higher rate than is possible with standard
DRAMs. A sequential and gapless data rate of up to
166 MHz is possible depending on burst length,
CAS latency and speed grade of the device.
Device Usage Chart
Operating
Temperature
Range
Package Outline
Access Time (ns)
Power
Temperature
Mark
T/S
6
7PC
7
8PC
Std.
L
U
0
°C to 70°C
Blank
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
V54C3256404VS 制造商:MOSEL 制造商全稱:MOSEL 功能描述:256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4
V54C3256404VT 制造商:MOSEL 制造商全稱:MOSEL 功能描述:256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4
V54C3256804VAB 制造商:MOSEL 制造商全稱:MOSEL 功能描述:256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4
V54C3256804VAT 制造商:MOSEL 制造商全稱:MOSEL 功能描述:256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4
V54C3256804VB 制造商:MOSEL 制造商全稱:MOSEL 功能描述:256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4
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