欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: V58C2256324SAH-40
廠商: PROMOS TECHNOLOGIES INC
元件分類: DRAM
英文描述: 8M X 32 DDR DRAM, 0.6 ns, PBGA144
封裝: LEAD FREE, BGA-144
文件頁數: 1/37頁
文件大?。?/td> 557K
代理商: V58C2256324SAH-40
1
V58C2256324SA
HIGH PERFORMANCE LOW POWER
2.5 VOLT 8M X 32 DDR SDRAM
4 BANKS X 2M X 32
V58C2256324SA Rev. 1.0 November 2003
28
33
36
40
System Frequency (fCK)
350 MHz
300 MHz
275 MHz
250MHz
Clock Cycle Time (tCK3)4.0
4.0
4.5
5.0
Clock Cycle Time (tCK4)3.3
3.3
3.6
4.0
Clock Cycle Time (tCK5)
2.85
3.3
3.6
4.0
Features
■ 4 banks x 2M x 32 organization
■ High speed data transfer rates with system frequency
up to 350 MHz
■ Data Mask for Write Control (DM)
■ Four Banks controlled by BA0 & BA1
■ Programmable CAS Latency: 3, 4, 5
■ Programmable Wrap Sequence: Sequential
or Interleave
■ Programmable Burst Length:
2, 4, 8 for Sequential Type
2, 4, 8 for Interleave Type
■ Automatic and Controlled Precharge Command
■ Power Down Mode
■ Auto Refresh and Self Refresh
■ Refresh Interval: 4096 cycles/32ms
■ Available in 144-ball BGA
■ Double Data Rate (DDR)
■ Bidirectional Data Strobe (DQs) for input and output
data, active on both edges
■ On-Chip DLL aligns DQ and DQs transitions with CLK
transitions
■ Differential clock inputs CLK and /CLK
■ Power Supply 2.5V ± 0.2V
■ 2.5V SSTL2 Weak Mode interface(Z0=34 ohm)
■ 1.8V Matched Impedance Interface (Z0=60 ohm)
Description
The V58C2256324SA is a four bank DDR DRAM
organized as 4 banks x 2M x 32. The V58C2256324SA
achieves high speed data transfer rates by employing a
chip architecture that prefetches multiple bits and then
synchronizes the output data to a system clock
All of the control, address, circuits are synchronized
with the positive edge of an externally supplied clock. I/O
transactions are possible on both edges of DQS.
Operating the four memory banks in an interleaved
fashion allows random access operation to occur at a
higher rate than is possible with standard DRAMs. A se-
quential and gapless data rate is possible depending on
burst length, CAS latency and speed grade of the device
.
Device Usage Chart
Operating
Temperature
Range
Package Outline
CLK Cycle Time (ns)
Power
Temperature
Mark
144-ball BGA
-28
-33
-36
-40
Std.
L
0°C to 70°C
Blank
相關PDF資料
PDF描述
V59C1512404QBLF3I 128M X 4 DDR DRAM, 0.45 ns, PBGA60
V5A010CB3H SNAP ACTING/LIMIT SWITCH, SPDT, MOMENTARY, 0.6A, 125VDC, 4.4mm, PANEL MOUNT
V5B010FB3 SNAP ACTING/LIMIT SWITCH, SPDT, MOMENTARY, 2.3mm, PANEL MOUNT
V5B030CB3H SNAP ACTING/LIMIT SWITCH, SPST, MOMENTARY, 0.6A, 125VDC, 4.4mm, PANEL MOUNT
V5B110SB SNAP ACTING/LIMIT SWITCH, SPDT, MOMENTARY, 2.4mm, PANEL MOUNT
相關代理商/技術參數
參數描述
V58C2256404S 制造商:MOSEL 制造商全稱:MOSEL 功能描述:HIGH PERFORMANCE 2.5 VOLT 256 Mbit DDR SDRAM
V58C2256804S 制造商:MOSEL 制造商全稱:MOSEL 功能描述:HIGH PERFORMANCE 2.5 VOLT 256 Mbit DDR SDRAM
V58C2256804SAT-5 制造商:Mosel Vitelic Corporation 功能描述:SDRAM, DDR, 32M x 8, 66 Pin, Plastic, TSSOP
V58C265164S 制造商:MOSEL 制造商全稱:MOSEL 功能描述:64 Mbit DDR SDRAM 2.5 VOLT 4M X 16
V58C265404S 制造商:MOSEL 制造商全稱:MOSEL 功能描述:HIGH PERFORMANCE 2.5 VOLT 16M X 4 DDR SDRAM 4 BANKS X 4Mbit X 4
主站蜘蛛池模板: 阳信县| 哈巴河县| 米林县| 修文县| 崇文区| 保定市| 丹凤县| 瑞金市| 太仆寺旗| 旺苍县| 昭觉县| 莱西市| 伊吾县| 弋阳县| 合阳县| 祁东县| 桦南县| 莲花县| 蒙自县| 丰宁| 浦城县| 砚山县| 竹北市| 尤溪县| 金寨县| 京山县| 长沙市| 正安县| 高雄市| 八宿县| 麟游县| 荆州市| 麻城市| 五常市| 东乌珠穆沁旗| 普洱| 虞城县| 苏尼特左旗| 石景山区| 织金县| 怀仁县|