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參數資料
| 型號： | VAM120 |
| 英文描述： | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 12A I(C) | SOT-121VAR |
| 中文描述： | 晶體管|晶體管|叩| 60V的五（巴西）總裁| 12A條一（c）|的SOT - 121VAR |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 259K |
| 代理商： | VAM120 |
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
VAM 120
120 Watts, 27 Volts, Class AB
Defcom 100 - 150
MHz
GENERAL DESCRIPTION
The VAM 120 is a COMMON EMITTER device designed to operae in a
collector modulated VHF power amplifier. It is a common emitter device,
optimized for use in the 100-150 MHz range.
CASE OUTLINE
55HT, Style 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 140 Watts
Maximum Voltage and Current
BVces Collector to Emiter Voltage 60 Volts
BVebo Emitter to Base Voltage 4.0 Volts
Ic Collector Current 12 A
Maximum Temperatures
Storage Temperature - 65 to +150 C
Operating Junction Temperature +200 C
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Pg
Pout
Pin
Pg
η
c
VSWR
Power Output
Power Input
Power Gain
Efficiency
Load Mismatch Tolerance
F = 150 MHz
Vcc = 27 Volts
F = 150 MHz
Vcc = 13.5 Volts
120
7.8
30
4.8
15
9.0
7.5
6.0
65
20
10
30:1
Watts
Watts
dB
Watts
Watts
dB
%
BVebo
BVces
BVceo
Cob
h
FE
θ
jc
Emitter to Base Breakdown
Collector to Emitter Breakdown
Collector to Emitter Breakdown
Output Capacitance
DC - Current Gain
Thermal Resistance
Ie = 5 mA
Ic = 20 mA
Ie = 50 mA
Vce = 5 V, Ic = 1 A
4.0
60
32
10
240
1.2
Volts
Volts
Volts
pF
C/W
o
Issue August 1996
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