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參數資料
| 型號： | VB40150C-E3/4W |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 20 A, 150 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 156K |
| 代理商： | VB40150C-E3/4W |
V40150C, VF40150C, VB40150C & VI40150C
Vishay General Semiconductor
Document Number: 89048
Revision: 24-Jun-09
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
New Product
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.55 V at IF = 5 A
FEATURES
Trench MOS Schottky technology
Low forward voltage drop, low power
losses
High efficiency operation
Meets MSL level 1, per J-STD-020, LF
maximum peak of 245 °C (for TO-263AB package)
Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB and
TO-262AA package)
Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case:
TO-220AB,
ITO-220AB,
TO-263AB
and
TO-262AA
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
2 x 20 A
VRRM
150 V
IFSM
160 A
VF at IF = 20 A
0.75 V
TJ max.
150 °C
TO-220AB
V40150C
VF40150C
1
2
3
PIN 1
PIN 2
CASE
PIN 3
PIN 1
PIN 2
PIN 3
TMBS
ITO-220AB
VI40150C
TO-262AA
PIN 1
PIN 2
PIN 3
K
VB40150C
PIN 1
PIN 2
K
HEATSINK
1
2
K
TO-263AB
1
K
2
3
1
2
3
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V40150C
VF40150C
VB40150C
VI40150C
UNIT
Maximum repetitive peak reverse voltage
VRRM
150
V
Maximum average forward rectified current
(fig. 1)
per device
per diode
IF(AV)
40
20
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
160
A
Non-repetitive avalanche energy
at TJ = 25 °C, L = 60 mH per diode
EAS
150
mJ
Peak repetitive reverse current at tp = 2 s, 1 kHz,
TJ = 38 °C ± 2 °C per diode
IRRM
0.5
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/s
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
VAC
1500
V
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
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相關代理商/技術參數 |
參數描述 |
|---|---|
| VB40150C-E3-8W | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual High-Voltage Trench MOS Barrier Schottky Rectifier5 |
| VB40170C | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
| VB40170C-E3 | 制造商:Vishay Semiconductors 功能描述:DIODE SCHOTTKY 170V 40A TO 制造商:Vishay Semiconductors 功能描述:DIODE, SCHOTTKY, 170V, 40A, TO263AB; Diode Type:Schottky; Diode Configuration:Dual Common Cathode; Repetitive Reverse Voltage Vrrm Max:170V; Forward Current If(AV):40A; Forward Voltage VF Max:1.2V; Forward Surge Current Ifsm ;RoHS Compliant: Yes |
| VB40170C-E3/4W | 功能描述:肖特基二極管與整流器 40A 170V TrenchMOS RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| VB40170C-E3/8W | 功能描述:肖特基二極管與整流器 40A 170V TrenchMOS RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
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