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參數(shù)資料
| 型號： | VBP104SR |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光敏二極管 |
| 英文描述： | Photo Diode, PIN PHOTO DIODE, ROHS COMPLIANT, SMD, 2 PIN |
| 中文描述： | Photodiodes 60V 215mW 65Deg |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 153K |
| 代理商： | VBP104SR |
VBP104S, VBP104SR
Vishay Semiconductors
www.vishay.com
Rev. 1.4, 24-Aug-11
1
Document Number: 81170
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Silicon PIN Photodiode
DESCRIPTION
VBP104S and VBP104SR are high speed and high sensitive
PIN photodiodes. It is a surface mount device (SMD)
including the chip with a 4.4 mm
2
sensitive area detecting
visible and near infrared radiation.
FEATURES
Package type: surface mount
Package form: GW, RGW
Dimensions (L x W x H in mm): 6.4 x 3.9 x 1.2
Radiant sensitive area (in mm
2
): 4.4
High photo sensitivity
High radiant sensitivity
Suitable for visible and near infrared radiation
Fast response times
Angle of half sensitivity:
= ± 65°
Floor life: 168 h, MSL 3, acc. J-STD-020
Lead (Pb)-free reflow soldering
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
High speed photo detector
Note
Test conditions see table “Basic Characteristics”
Note
MOQ: minimum order quantity
VBP104S
VBP104SR
PRODUCT SUMMARY
COMPONENT
VBP104S
VBP104SR
I
ra
(μA)
35
35
(deg)
± 65
± 65
λ
0.1
(nm)
430 to 1100
430 to 1100
ORDERING INFORMATION
ORDERING CODE
VBP104S
VBP104SR
PACKAGING
Tape and reel
Tape and reel
REMARKS
PACKAGE FORM
Gullwing
Reverse gullwing
MOQ: 1000 pcs, 1000 pcs/reel
MOQ: 1000 pcs, 1000 pcs/reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage
Power dissipation
T
amb
≤
25 °C
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Acc. reflow solder profile fig. 8
Thermal resistance junction/ambient
SYMBOL
V
R
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
60
215
100
- 40 to + 100
- 40 to + 100
260
350
UNIT
V
mW
°C
°C
°C
°C
K/W
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相關(guān)代理商/技術(shù)參數(shù) |
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| VBPW34FAS | 功能描述:光電二極管 60V 215mW 65Deg RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Photodiodes 反向電壓:10 V 最大暗電流:30 nA 峰值波長:565 nm 上升時間:3.1 us 下降時間:3 us 半強(qiáng)度角度:50 deg 封裝 / 箱體:TO-5 |
| VBPW34FASR | 功能描述:光電二極管 60V 215mW 65Deg RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Photodiodes 反向電壓:10 V 最大暗電流:30 nA 峰值波長:565 nm 上升時間:3.1 us 下降時間:3 us 半強(qiáng)度角度:50 deg 封裝 / 箱體:TO-5 |
| VBPW34S | 功能描述:光電二極管 60V 215mW 65Deg RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Photodiodes 反向電壓:10 V 最大暗電流:30 nA 峰值波長:565 nm 上升時間:3.1 us 下降時間:3 us 半強(qiáng)度角度:50 deg 封裝 / 箱體:TO-5 |
| VBPW34SR | 功能描述:光電二極管 60V 215mW 65Deg RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Photodiodes 反向電壓:10 V 最大暗電流:30 nA 峰值波長:565 nm 上升時間:3.1 us 下降時間:3 us 半強(qiáng)度角度:50 deg 封裝 / 箱體:TO-5 |
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