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參數資料
| 型號： | VG26V18165CJ-6 |
| 廠商： | VANGUARD INTERNATIONAL SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 1,048,576 x 16 - Bit CMOS Dynamic RAM |
| 中文描述： | 1M X 16 EDO DRAM, 60 ns, PDSO42 |
| 封裝： | 0.400 INCH, PLASTIC, SOJ-42 |
| 文件頁數： | 1/27頁 |
| 文件大小： | 231K |
| 代理商： | VG26V18165CJ-6 |
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Document:1G5-0147
Rev.1
Page 1
VIS
1,048,576 x 16 - Bit
CMOS Dynamic RAM
VG26(V)(S)18165C
Description
The device CMOS Dynamic RAM organized as 1,048,576 words x 16 bits with extended data out access
mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single
5V only or 3.3V oniy power supply. Low voltage operation is more suitable to be used on battery backup,
portable electronic application. A new refresh feature called “self-refresh” is supported and very slow CBR
cycles are being performed. lt is packaged in JEDEC standard 42-pin plastic SOJ.
Features
Single 5V(
%) or 3.3V(
%) only power supply
High speed t
RAC
acess time: 50/60ns
Low power dissipation
- Active wode : 5V version 660/605 mW (Mas)
3.3V version 432/396 mW (Mas)
- Standby mode: 5V version 1.375 mW (Mas)
3.3V version 0.54 mW (Mas)
Extended - data - out(EDO) page mode access
I/O level: TTL compatible (Vcc = 5V)
LVTTL compatible (Vcc = 3.3V)
1024 refresh cycle in 16 ms(Std.) or 128 ms(S-version)
4 refresh modes:
- RAS only refresh
- CAS - before - RAS refresh
- Hidden refresh
- Self-refresh(S-version)
10
±
10
±
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