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參數(shù)資料
| 型號： | VN10LP |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
| 中文描述： | 270 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | TO-92 COMPATIBLE, E-LINE PACKAGE-3 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 22K |
| 代理商： | VN10LP |
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 1 – FEB 94
FEATURES
*
60 Volt V
DS
*
R
DS(on)
=5
REFER TO ZVN3306A FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
60
V
Continuous Drain Current at T
amb
= 25°C
Pulsed Drain Current
270
mA
3
A
Gate Source Voltage
±
20
625
V
Power Dissipation at T
amb
= 25°C
Operating and Storage Temperature Range
mW
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TY P.
MAX .
UNIT
CONDITIONS.
Drain-Source
Breakdown Voltage
BV
DS S
60
V
I
D
=100
μ
A, V
GS
=0V
Gate-Source
Breakdown Voltage
V
GS (th)
0.8
2.5
V
ID=1mA, V
DS
= V
GS
Gate Body Leakage
I
GS S
100
nA
V
GS
=
±
20V, V
DS
=0V
Zero Gate Voltage
Drain Current (1)
I
DS S
10
μ
A
V
DS
=60 V, V
GS
=0V
On State Drain
Current(1)
I
D(on)
750
mA
V
DS
=15 V, V
GS
=10V
S tatic Drain Source On
S tate Resistance (1)
R
DS (on)
5.0
7.5
V
GS
=10V,I
D
=500mA
V
GS
=5V, I
D
=200mA
Forward
Transconductance
(1)(2)
g
fs
100
mS
V
DS
=15V,I
D
=500mA
Input Capacitance (2)
C
iss
60
pF
Common Source
Output Capacitance (2)
C
oss
25
pF
V
=25 V, V
GS
=0V
f=1MHz
Reverse Transfer
Capacitance (2)
C
rss
5
pF
Turn-On Time (2)(3)
t
(on)
10
ns
V
DD
≈
15V, I
D
=600mA
Turn-Off Time (2)(3)
t
(off)
10
ns
E-Line
TO92 Compatible
VN10LP
3-90
D
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| VN10LP_05 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
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