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參數資料
| 型號： | VNS1NV04D13TR |
| 英文描述： | TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | SO |
| 中文描述： | 晶體管| MOSFET的|配對| N -通道|蘇 |
| 文件頁數： | 1/14頁 |
| 文件大小： | 156K |
| 代理商： | VNS1NV04D13TR |
March 2002
1/14
VNS1NV04D
“OMNIFET II”:
FULLY AUTOPROTECTED POWER MOSFET
1
n
LINEAR CURRENT LIMITATION
n
THERMAL SHUT DOWN
n
SHORT CIRCUIT PROTECTION
n
INTEGRATED CLAMP
n
LOW CURRENT DRAWN FROM INPUT PIN
n
DIAGNOSTIC FEEDBACK THROUGH INPUT
PIN
n
ESD PROTECTION
n
DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
n
COMPATIBLE WITH STANDARD POWER
MOSFET
DESCRIPTION
The VNS1NV04D is a device formed by two
monolithic
OMNIFET
II
standard SO-8 package. The OMNIFET II are
designed in STMicroelectronics VIPower M0-3
chips
housed
in
a
Technology: they are intended for replacement of
standard Power MOSFETS from DC up to 50KHz
applications. Built in thermal shutdown, linear
current limitation and overvoltage clamp protects
the chip in harsh environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
TYPE
R
DS(on)
250 m
(*)
I
lim
V
clamp
40 V (*)
VNS1NV04D
1.7 A (*)
SO-8
BLOCK DIAGRAM
SOURCE2
OVERVOLTAGE
CLAMP
LINEAR
LIMITER
DRAIN1
SOURCE1
OVER
TEMPERATURE
GATE
CONTROL
DRAIN2
OVERVOLTAGE
CLAMP
LINEAR
LIMITER
GATE
CONTROL
OVER
TEMPERATURE
INPUT2
INPUT1
(*) Per each device
相關PDF資料 |
PDF描述 |
|---|---|
| VNS3NV04D13TR | TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | SO |
| VO0631T | VO0600T, VO0601T, VO0611T, VO0630T, VO0631T, VO0661T - High Speed Optocoupler, 10 MBd, SOIC-8 Package |
| VO0661T | VO0600T, VO0601T, VO0611T, VO0630T, VO0631T, VO0661T - High Speed Optocoupler, 10 MBd, SOIC-8 Package |
| VO0630T | VO0600T, VO0601T, VO0611T, VO0630T, VO0631T, VO0661T - High Speed Optocoupler, 10 MBd, SOIC-8 Package |
| VO0611T | OPTOCPLR 10MBD 1CH 15KV/US 8SOIC |
相關代理商/技術參數 |
參數描述 |
|---|---|
| VNS1NV04D-E | 功能描述:MOSFET N-Ch 40V 1.7A Omni RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VNS1NV04DP-E | 功能描述:MOSFET OMNIFET POWER MOSFET 40V 1.7 A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VNS1NV04DPTR-E | 功能描述:MOSFET OMNIFET POWER MOSFET 40V 1.7 A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VNS1NV04DTR-E | 功能描述:MOSFET N-Ch 40V 1.7A Omni RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VNS1NV04-E | 功能描述:MOSFET N-Ch 40V 1.7A Omni RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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