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參數資料
| 型號： | W26L010AT-10 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | SRAM |
| 英文描述： | 64K X 16 High Speed CMOS Static RAM |
| 中文描述： | 64K X 16 STANDARD SRAM, 10 ns, PDSO44 |
| 封裝： | TSOP2-44 |
| 文件頁數： | 3/10頁 |
| 文件大?。?/td> | 131K |
| 代理商： | W26L010AT-10 |
W26L010A
Publication Release Date: July 1998
- 3 -
Revision A3
Operating Characteristics
(V
DD
= 3.3V
±
5%, V
SS
= 0V, T
A
= 0 to 70
°
C)
PARAMETER
Input Low Voltage
Input High Voltage
SYM.
V
IL
V
IH
TEST CONDITIONS
-
-
MIN.
-0.5
+2.0
TYP.
-
-
MAX.
+0.8
V
DD
+0.3
+10
UNIT
V
V
Input Leakage
Current
Output Leakage
Current
I
LI
V
IN
= V
SS
to V
DD
-10
-
μ
A
I
LO
V
I/O
= V
SS
to V
DD
Output Pins in High Z,
See Truth Table
I
OL
= +8.0 mA
I
OH
= -4.0 mA
-10
-
+10
μ
A
Output Low Voltage
Output High Voltage
Operating Power
V
OL
V
OH
I
DD
-
-
-
-
0.4
-
160
V
V
2.4
-
CS = V
IL
(max.), Cycle =
min.
I/O = open, Duty = 100%
10
mA
Supply Current
Standby Power
12
-
-
-
-
140
30
I
SB
CS = V
IH
(min.), Cycle = min.
mA
Supply Current
I
SB1
CS = V
DD
-0.2V, I/O = open
All other pins = V
DD
-0.2V/GND
-
-
10
mA
Note: Typical characteristics are evaluated at V
DD
= 3.3V, T
A
= 25
°
C.
CAPACITANCE
(V
DD
= 3.3V, T
A
= 25
°
C, f = 1 MHz)
PARAMETER
SYM.
C
IN
C
I/O
CONDITIONS
V
IN
= 0V
V
OUT
= 0V
MAX.
6
8
UNIT
pF
pF
Input Capacitance
Input/Output Capacitance
Note: These parameters are sampled but not 100% tested.
AC CHARACTERISTICS
AC Test Conditions
PARAMETER
CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Level
Output Load
0V to 3V
2 nS
1.5V
C
L
= 30 pF, I
OH
/I
OL
= -4 mA/8 mA
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