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參數資料
型號: W29C020-90B
廠商: WINBOND ELECTRONICS CORP
元件分類: PROM
英文描述: 256K X 8 CMOS FLASH MEMORY
中文描述: 256K X 8 FLASH 5V PROM, 90 ns, PDIP32
封裝: 0.600 INCH, PLASTIC, DIP-32
文件頁數: 1/21頁
文件大小: 267K
代理商: W29C020-90B
W29C020
256K
×
8 CMOS FLASH MEMORY
Publication Release Date: February 1998
- 1 -
Revision A3
GENERAL DESCRIPTION
The W29C020 is a 2-megabit, 5-volt only CMOS flash memory organized as 256K
×
8 bits. The
device can be written (erased and programmed) in-system with a standard 5V power supply. A 12-volt
V
PP
is not required. The unique cell architecture of the W29C020 results in fast write (erase/program)
operations with extremely low current consumption compared to other comparable 5-volt flash
memory products. The device can also be written (erased and programmed) by using standard
EPROM programmers.
FEATURES
Single 5-volt write (erase and program)
operations
Fast page-write operations
128 bytes per page
Page write (erase/program) cycle: 10 mS
(max.)
Effective byte-write (erase/program) cycle
time: 39
μ
S
Optional software-protected data write
Fast chip-erase operation: 50 mS
Two 8 KB boot blocks with lockout
Typical page write (erase/program) cycles:
100/1K/10K
Read access time: 70/90/120 nS
Ten-year data retention
Software and hardware data protection
Low power consumption
Active current: 25 mA (typ.)
Standby current: 20
μ
A (typ.)
Automatic write (erase/program) timing with
internal V
PP
generation
End of write (erase/program) detection
Toggle bit
Data polling
Latched address and data
All inputs and outputs directly TTL compatible
JEDEC standard byte-wide pinouts
Available packages: 32-pin 600 mil DIP, 450 mil
SOP, TSOP, and 32-pin PLCC
相關PDF資料
PDF描述
W29C020P-12 256K X 8 CMOS FLASH MEMORY
W29C020P-12A 256K X 8 CMOS FLASH MEMORY
W29C020P-12B 256K X 8 CMOS FLASH MEMORY
W29C020T-90 256K X 8 CMOS FLASH MEMORY
W29C020P-90 256K X 8 CMOS FLASH MEMORY
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