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參數(shù)資料
型號: W29C040
廠商: WINBOND ELECTRONICS CORP
英文描述: 512K X 8 CMOS FLASH MEMORY
中文描述: 為512k × 8的CMOS閃存
文件頁數(shù): 1/20頁
文件大小: 261K
代理商: W29C040
W29C040
512K
×
8 CMOS FLASH MEMORY
Publication Release Date: May 1999
- 1 -
Revision A5
GENERAL DESCRIPTION
The W29C040 is a 4-megabit, 5-volt only CMOS page mode EEPROM organized as 512K
×
8 bits.
The device can be written (erased and programmed) in-system with a standard 5V power supply. A
12-volt V
PP
is not required. The unique cell architecture of the W29C040 results in fast write (erase/
program) operations with extremely low current consumption compared to other comparable 5-volt
flash memory products. The device can also be written (erased and programmed) by using standard
EPROM programmers.
FEATURES
Single 5-volt write (erase and program)
operations
Fast page-write operations
256 bytes per page
Page write (erase/program) cycle: 5 mS
(typ.)
Effective byte-write (erase/program) cycle
time: 19.5
μ
S
Optional software-protected data write
Fast chip-erase operation: 50 mS
Two 16 KB boot blocks with lockout
Typical page write (erase/program) cycles:
1K/10K (typ.)
Read access time: 90/120 nS
Ten-year data retention
Software and hardware data protection
Low power consumption
Active current: 25 mA (typ.)
Standby current: 20
μ
A (typ.)
Automatic write (erase/program) timing with
internal V
PP
generation
End of write (erase/program) detection
Toggle bit
Data polling
Latched address and data
All inputs and outputs directly TTL compatible
JEDEC standard byte-wide pinouts
Available packages: TSOP and PLCC
相關(guān)PDF資料
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W29C040P-12 512K X 8 CMOS FLASH MEMORY
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