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參數資料
型號: W29C040P-90C
廠商: WINBOND ELECTRONICS CORP
元件分類: PROM
英文描述: 512K X 8 FLASH 5V PROM, 90 ns, PQCC32
封裝: PLASTIC, LCC-32
文件頁數: 1/22頁
文件大小: 134K
代理商: W29C040P-90C
Preliminary W29C040
512K
× 8 CMOS FLASH MEMORY
Publication Release Date: April 1997
- 1 -
Revision A1
GENERAL DESCRIPTION
The W29C040 is a 4-megabit, 5-volt only CMOS page mode EEPROM organized as 512K
× 8 bits.
The device can be written (erased and programmed) in-system with a standard 5V power supply. A
12-volt VPP is not required. The unique cell architecture of the W29C040 results in fast write (erase/
program) operations with extremely low current consumption compared to other comparable 5-volt
flash memory products. The device can also be written (erased and programmed) by using standard
EPROM programmers.
FEATURES
Single 5-volt write (erase and program)
operations
Fast page-write operations
256 bytes per page
Page write (erase/program) cycle: 5 mS
(typ.)
Effective byte-write (erase/program) cycle
time: 19.5
S
Optional software-protected data write
Fast chip-erase operation: 50 mS
Two 16 KB boot blocks with lockout
Typical Page write (erase/program) cycles:
1K/10K/100K (typ.)
Read access time: 90/120/150 nS
Ten-year data retention
Software and hardware data protection
Low power consumption
Active current: 25 mA (typ.)
Standby current: 20 A (typ.)
Automatic write (erase/program) timing with
internal VPP generation
End of write (erase/program) detection
Toggle bit
Data polling
Latched address and data
All inputs and outputs directly TTL compatible
JEDEC standard byte-wide pinouts
Available packages: 32-pin 600 mil DIP, 450
mil
SOP, TSOP, and PLCC
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