
W29C101
64K
×
16 CMOS FLASH MEMORY
Publication Release Date: February 1998
- 1 -
Revision A3
GENERAL DESCRIPTION
The W29C101 is a 1-megabit, 5-volt only CMOS flash memory organized as 64K
×
16 bits. The
device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is
not required. The unique cell architecture of the W29C101 results in fast program/erase operations
with extremely low current consumption (compared to other comparable 5-volt flash memory
products). The device can also be programmed and erased using standard EPROM programmers.
FEATURES
Single 5-volt program and erase operations
Fast page-write operations
128 words per page
Page program cycle: 10 mS (max.)
Effective word-program cycle time: 39
μ
S
Optional software-protected data write
Fast chip-erase operation: 50 mS
Read access time: 70/90/120 nS
Typical page program/erase cycles: 1K/10K
Ten-year data retention
Software and hardware data protection
Low power consumption
Active current: 25 mA (typ.)
Standby current: 20
μ
A (typ.)
Automatic program timing with internal VPP
generation
End of program detection
Toggle bit
Data polling
Latched address and data
TTL compatible I/O
JEDEC standard word-wide pinouts
Available packages: 40-pin TSOP
BLOCK DIAGRAM
PIN CONFIGURATION
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
GND
A9
A10
A11
A12
A13
A14
A15
NC
WE
V
DD
A8
A7
A6
A5
A4
A3
A2
A1
A0
OE
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
GND
DQ8
40-pin
TSOP
NC
CE
DQ15
DQ14
DQ13
DQ12
DQ11
DQ10
DQ9
CONTROL
OUTPUT
BUFFER
DECODER
CORE
ARRAY
CE
OE
WE
A0
.
.
A15
.
DQ0
V
DD
V
SS
DQ15
PIN DESCRIPTION
SYMBOL
A0
A15
DQ0
DQ15
CE
PIN NAME
Address Inputs
Data Inputs/Outputs
Chip Enable
Output Enable
Write Enable
Power Supply
Ground
No Connection
OE
WE
V
DD
GND
NC