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參數資料
型號: W29C102T-90B
廠商: WINBOND ELECTRONICS CORP
元件分類: PROM
英文描述: 64K 16 CMOS FLASH MEMORY
中文描述: 64K X 16 FLASH 5V PROM, 90 ns, PDSO40
封裝: 10 X 20 MM, TSOP-40
文件頁數: 1/21頁
文件大小: 205K
代理商: W29C102T-90B
W29C102
64K
×
16 CMOS FLASH MEMORY
Publication Release Date: March 1998
- 1 -
Revision A3
GENERAL DESCRIPTION
The W29C102 is a 1-megabit, 5-volt only CMOS flash memory organized as 64K
×
16 bits. The
device can be programmed and erased in-system with a standard 5V power supply. A 12-volt V
PP
is
not required. The unique cell architecture of the W29C102 results in fast program/erase operations
with extremely low current consumption (compared to other comparable 5-volt flash memory
products). The device can also be programmed and erased using standard EPROM programmers.
FEATURES
Single 5-volt program and erase operations
Fast page-write operations
128 words per page
Page program cycle: 10 mS (max.)
Effective word-program cycle time: 39
μ
S
Optional software-protected data write
Fast chip-erase operation: 50 mS
Read access time: 70/90/120 nS
Typical page program/erase cycles: 1K/10K
Ten-year data retention
Software and hardware data protection
Low power consumption
Active current: 25 mA (typ.)
Standby current: 20
μ
A (typ.)
Automatic program timing with internal V
PP
generation
End of program detection
Toggle bit
Data polling
Latched address and data
TTL compatible I/O
JEDEC standard word-wide pinouts
Available packages: 40-pin 600 mil DIP, TSOP
and 44-pin PLCC
相關PDF資料
PDF描述
W29C512A 64 K x 8 CMOS FLASH MEMORY
W29C512AP-90 64 K x 8 CMOS FLASH MEMORY
W29C512AT-90 64 K x 8 CMOS FLASH MEMORY
W29D040C 512K×8bit CMOS Flash Memory(512K×8位CMOS閃速存儲器)
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相關代理商/技術參數
參數描述
W29C512A 制造商:WINBOND 制造商全稱:Winbond 功能描述:64 K x 8 CMOS FLASH MEMORY
W29C512AP-90 制造商:WINBOND 制造商全稱:Winbond 功能描述:64 K x 8 CMOS FLASH MEMORY
W29C512AT-90 制造商:WINBOND 制造商全稱:Winbond 功能描述:64 K x 8 CMOS FLASH MEMORY
W29EE011 制造商:WINBOND 制造商全稱:Winbond 功能描述:128K X 8 CMOS FLASH MEMORY
W29EE011-12 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
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