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參數資料
型號: W29EE011P15B
廠商: WINBOND ELECTRONICS CORP
元件分類: PROM
英文描述: 128K X 8 CMOS FLASH MEMORY
中文描述: 128K X 8 FLASH 5V PROM, 150 ns, PQCC32
封裝: PLASTIC, LCC-32
文件頁數: 1/20頁
文件大小: 183K
代理商: W29EE011P15B
W29EE011
128K
×
8 CMOS FLASH MEMORY
Publication Release Date: July 1999
- 1 -
Revision A12
GENERAL DESCRIPTION
The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K
×
8 bits. The
device can be programmed and erased in-system with a standard 5V power supply. A 12-volt V
PP
is
not required. The unique cell architecture of the W29EE011 results in fast program/erase operations
with extremely low current consumption (compared to other comparable 5-volt flash memory
products). The device can also be programmed and erased using standard EPROM programmers.
FEATURES
Single 5-volt program and erase operations
Fast page-write operations
128 bytes per page
Page program cycle: 10 mS (max.)
Effective byte-program cycle time: 39
μ
S
Optional software-protected data write
Fast chip-erase operation: 50 mS
Read access time: 90/150 nS
Page program/erase cycles: 1K/10K
Ten-year data retention
Software and hardware data protection
Low power consumption
Active current: 25 mA (typ.)
Standby current: 20
μ
A (typ.)
Automatic program timing with internal V
PP
generation
End of program detection
Toggle bit
Data polling
Latched address and data
TTL compatible I/O
JEDEC standard byte-wide pinouts
Available packages: 32-pin 600 mil DIP,
TSOP, and PLCC
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相關代理商/技術參數
參數描述
W29EE011P15N 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
W29EE011P-90 制造商:Winbond Electronics Corp 功能描述:
W29EE011P90B 制造商:WINBOND 制造商全稱:Winbond 功能描述:128K X 8 CMOS FLASH MEMORY
W29EE011P90N 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM|FLASH|128KX8|CMOS|LDCC|32PIN|PLASTIC
W29EE011P90Z 功能描述:IC FLASH 1MBIT 90NS 32PLCC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M(8Mx32) 速度:133MHz 接口:并聯 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應商設備封裝:90-VFBGA(8x13) 包裝:帶卷 (TR) 其它名稱:557-1327-2
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