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參數資料
型號: W29EE512P-90
廠商: WINBOND ELECTRONICS CORP
元件分類: PROM
英文描述: 64K X 8 CMOS FLASH MEMORY
中文描述: 64K X 8 FLASH 5V PROM, 90 ns, PQCC32
封裝: PLASTIC, LCC-32
文件頁數: 1/22頁
文件大小: 295K
代理商: W29EE512P-90
W29EE512
64K
8 CMOS FLASH MEMORY
Publication Release Date: February 18, 2002
- 1 -
Revision A7
GENERAL DESCRIPTION
The W29EE512 is a 512K bit, 5-volt only CMOS flash memory organized as 64K
×
8 bits. The device
can be programmed and erased in-system with a standard 5V power supply. A 12-volt V
PP
is not
required. The unique cell architecture of the W29EE512 results in fast program/erase operations with
extremely low current consumption (compared to other comparable 5-volt flash memory products). The
device can also be programmed and erased using standard EPROM programmers.
FEATURES
Single 5-volt program and erase operations
Fast page-write operations
128 bytes per page
Page program cycle: 10 mS (max.)
Effective byte-program cycle time: 39
μ
S
Optional software-protected data write
Fast chip-erase operation: 50 mS
Read access time: 70/90/120 nS
Typical page program/erase cycles: 1K/10K
Ten-year data retention
Software and hardware data protection
Low power consumption
Active current: 50 mA (max.)
Standby current: 100
μ
A (max.)
Automatic program timing with internal V
PP
generation
End of program detection
Toggle bit
Data polling
Latched address and data
TTL compatible I/O
JEDEC standard byte-wide pinouts
Available packages: 32-pin PLCC, TSOP and
VSOP
相關PDF資料
PDF描述
W29EE512 64K X 8 CMOS FLASH MEMORY
W29EE512P-70 64K X 8 CMOS FLASH MEMORY
W29EE512P-70B 64K X 8 CMOS FLASH MEMORY
W29EE512P-90B 64K X 8 CMOS FLASH MEMORY
W29EE512T-12 64K X 8 CMOS FLASH MEMORY
相關代理商/技術參數
參數描述
W29EE512P-90B 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 8 CMOS FLASH MEMORY
W29EE512Q-70 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 8 CMOS FLASH MEMORY
W29EE512Q-70B 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 8 CMOS FLASH MEMORY
W29EE512Q-90 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 8 CMOS FLASH MEMORY
W29EE512Q-90B 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 8 CMOS FLASH MEMORY
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